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Volumn 76, Issue 1, 2000, Pages 40-42

Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions

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EID: 0002248935     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125649     Document Type: Article
Times cited : (11)

References (11)
  • 3
    • 0000235265 scopus 로고
    • J. P. Biersack and L. G. Haggmark. Nucl. Instrum. Methods 174, 257 (1980). In the previous work of Ref. 2, as in this work, we only count as defects the atomic displacements which subsist after irradiation.
    • (1980) Nucl. Instrum. Methods , vol.174 , pp. 257
    • Biersack, J.P.1    Haggmark, L.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.