Simulation of terahertz generation at semiconductor surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 16, 2002, Pages 1-8

  Johnston, M B ^a   Whittaker, D M ^a   Corchia, A ^a   Davies, A G ^a   Linfield, E H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84876943974     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.65.165301     Document Type: Article

References (44)

1. X.-C. Zhang, B. B. Hu, J. T. Darrow, and D. H. Auston, Appl. Phys. Lett. 56, 1011 (1990).
2. B. B. Hu, X.-C. Zhang, and D. H. Auston, Phys. Rev. Lett. 67, 2709 (1991).
3. A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, Phys. Rev. B 61, 16 642 (2000).
4. R. Kersting, J. N. Heyman, G. Strasser, and K. Unterrainer, Phys. Rev. B 58, 4553 (1998).
5. D. H. Auston and K. P. Cheung, J. Opt. Soc. Am. B 2, 606 (1984).
6. P. Y. Han, G. C. Cho, and X.-C. Zhang, Opt. Lett. 25, 242 (2000).
7. D. M. Mittleman, S. Hunsche, L. Boivin, and M. C. Nuss, Opt. Lett. 22, 904 (1997).
8. R. M. Woodward, B. Cole, V. P. Wallace, D. D. Arnone, R. Pye, E. H. Linfield, A. G. Davies, and M. Pepper, in Technical Digest of the Conference on Lasers and Electro-Optics (Optical Society of America, Baltimore, 2001).
9. P. Gu, M. Tani, S. Kono, and K. Sakai, in 8th International Conference on Terahertz Electronics (VDE Verlag, Berlin-Offenbach, 2000), pp. 63-65.
10. S. Kono, P. Gu, M. Tani, and K. Sakai, Appl. Phys. B: Lasers Opt. 71, 901 (2000).
11. H. Ohtake, S. Ono, Z. Liu, N. Sarukura, M. Ohta, K. Watanabe, and Y. Matsumoto, Jpn. J. Appl. Phys., Part 2 38, L1186 (1999).
12. C. Weiss, R. Wallenstein, and R. Beigang, Appl. Phys. Lett. 77, 4160 (2000).
13. M. B. Johnston, A. Corchia, A. Dowd, E. H. Linfield, A. G. Davies, R. McLaughlin, D. D. Arnone, and M. Pepper, Physica E (to be published).
14. N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, J. Appl. Phys. 84, 654 (1998).
15. S. Izumida, S. Ono, Z. Liu, H. Ohtake, and N. Sarukura, Appl. Phys. Lett. 75, 451 (1999).
16. R. McLaughlin, A. Corchia, M. B. Johnston, Q. Chen, C. M. Ciesla, D. D. Arnone, G. A. C. Jones, E. H. Linfield, A. G. Davies, and M. Pepper, Appl. Phys. Lett. 76, 2038 (2000).
17. J. N. Heyman, P. Neocleous, D. Hebert, P. A. Crowell, T. Müller, and K. Unterrainer, Phys. Rev. B 64, 085202 (2001).
18. J. Shan, C. Weiss, R. Wallenstein, R. Beigang, and T. F. Heinz, Opt. Lett. 26, 849 (2001).
19. S. L. Chuang, S. Schmitt-Rink, B. I. Greene, P. N. Saeta, and A. F. J. Levi, Phys. Rev. Lett. 68, 102 (1992).
20. X. C. Zhang, Y. Jin, and X. F. Ma, Appl. Phys. Lett. 61, 2764 (1992).
21. X.-C. Zhang, Y. Jin, L. E. Kingsley, and M. Weiner, Appl. Phys. Lett. 62, 2477 (1993).
22. X.-C. Zhang and D. H. Auston, J. Appl. Phys. 71, 326 (1992).
23. T. Dekorsy, T. Pfeifer, W. Kütt, and H. Kurz, Phys. Rev. B 47, 3842 (1993).
24. H. Dember, Phys. Z. 32, 554 (1931).
25. H. Dember, Phys. Z. 32, 856 (1931).
26. H. Dember, Phys. Z. 33, 207 (1932).
27. T. Dekorsy, H. Auer, H. J. Bakker, H. G. Roskos, and H. Kurz, Phys. Rev. B 53, 4005 (1996).
28. A. V. Efanov and M. V. Éntin, Fiz. Tekh. Poluprovodn. 20, 24 (1986) [Sov. Phys. Semiconductors 20, 11 (1986)].
29. T. Held, T. Kuhn, and G. Mahler, Phys. Rev. B 44, 12 873 (1991).
30. R. Kersting, K. Unterrainer, G. Strasser, H. F. Kauffmann, and E. Gornik, Phys. Rev. Lett. 79, 3038 (1997).
31. A. V. Kuznetsov and C. J. Stanton, Phys. Rev. B 48, 10 828 (1993).
32. A. V. Efanov and M. V. Éntin, Fiz. Tekh. Poluprovodn. 22, 386 (1988) [Sov. Phys. Semiconductors 22, 237 (1998)].
33. G. Meinert, L. Bányai, P. Gartner, and H. Haug, Phys. Rev. B 62, 5003 (2000).
34. M. B. Johnston, D. M. Whittaker, A. Corchia, A. G. Davies, and E. H. Linfield, J. Appl. Phys. 91, 2104 (2002).
35. W. H. Press, B. P. Flannery, S. A. Teukolsky, and W. T. Vetterling, Numerical Recipes in C (Cambridge University Press, Cambridge, England, 1993), code modified into three-dimensions by the author.
36. K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices (Artech House, Inc., Boston, 1993).
37. B. K. Ridley, Quantum Processes in Semiconductors (Clarendon Press, Oxford, 1993).
38. O. Madelung, ed., Semiconductor Basic Data (Springer-Verlag, Berlin, 1996), 2nd ed.
39. I. Vuraftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
40. S. Zollner, S. Gopalan, and M. Cardona, Appl. Phys. Lett. 54, 614 (1989).
41. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, Physics and Material Properties (Springer, Berlin, 1996), Chap. 8, pp. 448-453.
42. L. A. Balagurov, O. Y. Borkovskaya, N. L. Dmitruk, O. I. Maeva, and E. M. Omel’yanovskii, Fiz. Tekh. Poluprovodn. 10, 1108 (1976) [Sov. Phys. Semicond. 10, 659 (1976)].
43. S. Ono, M. Takeuchi, and T. Takahashi, Appl. Phys. Lett. 78, 1086 (2001).
44. W. E. Spicer, Z. Liliental-Weber, E. Weber, N. Newman, T. Kendelewicz, R. Cao, C. McCants, P. Mahowald, K. Miyano, and I. Lindau, J. Vac. Sci. Technol. B 6, 1245 (1988).