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Semiconductor Science and Technology
Volumn 16, Issue 6, 2001, Pages 440-446
Defects and defect behaviour in GaAs grown at low temperature
(6)
Stellmacher, M
a,c
Bisaro, R
a
Galtier, P
a
Nagle, J
a
Khirouni, K
b,d
Bourgoin, J C
b
a
THALES
(
France
)
b
SORBONNE UNIVERSITÉ
(
France
)
c
Science and Technology Division
(
France
)
d
FACULTÉ DES SCIENCES DE MONASTIR
(
Tunisia
)
Author keywords
[No Author keywords available]
Indexed keywords
ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRON DIFFRACTION; HALL EFFECT; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;
ANTISITES;
SEMICONDUCTING GALLIUM ARSENIDE;
EID
:
0035362370
PISSN
:
02681242
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1088/0268-1242/16/6/304
Document Type
:
Article
Times cited : (
21
)
References (
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
