Enhanced drift velocity of photoelectrons in a semiconductor with ultrafast carrier recombination

Semiconductor Science and Technology

Volumn 14, Issue 10, 1999, Pages 945-947

  Reklaitis, A ^a   Krotkus, A ^a   Grigaliunaite, G ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b VILNIUS GEDIMINAS TECHNICAL UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON SCATTERING; ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTOR GROWTH; ULTRAFAST PHENOMENA;

ELECTRON VELOCITY OVERSHOOT PHENOMENON; PHOTOELECTRONS; STEADY-STATE ELECTRON DRIFT VELOCITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032594714     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/10/311     Document Type: Article

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