Fluence- and temperature-dependent studies of carrier dynamics in radiation-damaged silicon-on-sapphire and amorphous silicon

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 9012-9018

  Lui, K P H ^a   Hegmann, F A ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ENERGY GAP; FILM GROWTH; OPTICAL PROPERTIES; RADIATION DAMAGE; SAPPHIRE; THERMAL EFFECTS; THIN FILMS;

CARRIER DYNAMICS;

AMORPHOUS SILICON;

EID: 0038311987     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569665     Document Type: Article

References (38)

1. P. A. Stolk, F. W. Saris, A. J. M. Berntsen, W. F. van der Weg, L. T. Sealy, R. C. Barklie, G. Krötz, and G. Müller. J. Appl. Phys. 75, 7266 (1994).
2. A. Esser, H. Heesel, H. Kurz, C. Wang, G. H. Parsons, and G. Lucovsky, J. Appl. Phys. 73, 1235 (1993).
3. X. Liu, R. O. Pohl, and R. S. Crandall, Physica B 280, 251 (2000).
4. F. E. Doany, D. Grischkowsky, and C.-C. Chi, Appl. Phys. Lett. 50, 460 (1987).
5. See. for example, Ch. Fattinger and D. Grischkowski, Appl. Phys. Lett. 54, 490 (1989).
6. A. V. Shah, R. Platz, and H. Keppner, Sol. Energy Mater. Sol. Cells 38, 501 (1995).
7. D. Adler, Amorphous Semiconductors (CRC Press, Cleveland, OH, 1971), pp. 27-38.
8. See these recent examples: A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, J. Appl. Phys. 92, 2424 (2002); N. A. Schultz and P. C. Taylor, Phys. Rev. B 65, 235207 (2002); S. Sriraman, S. Agarwal, E. S. Aydil, and D. Maroudas, Nature (London) 418, 62 (2002); C. W. Myles, B. C. Ha, and Y. K. Park, J. Phys. Chem. Solids 63, 1691 (2002); J. Non-Cryst. Solids 299, (2002).
9. See these recent examples: A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, J. Appl. Phys. 92, 2424 (2002); N. A. Schultz and P. C. Taylor, Phys. Rev. B 65, 235207 (2002); S. Sriraman, S. Agarwal, E. S. Aydil, and D. Maroudas, Nature (London) 418, 62 (2002); C. W. Myles, B. C. Ha, and Y. K. Park, J. Phys. Chem. Solids 63, 1691 (2002); J. Non-Cryst. Solids 299, (2002).
10. See these recent examples: A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, J. Appl. Phys. 92, 2424 (2002); N. A. Schultz and P. C. Taylor, Phys. Rev. B 65, 235207 (2002); S. Sriraman, S. Agarwal, E. S. Aydil, and D. Maroudas, Nature (London) 418, 62 (2002); C. W. Myles, B. C. Ha, and Y. K. Park, J. Phys. Chem. Solids 63, 1691 (2002); J. Non-Cryst. Solids 299, (2002).
11. See these recent examples: A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, J. Appl. Phys. 92, 2424 (2002); N. A. Schultz and P. C. Taylor, Phys. Rev. B 65, 235207 (2002); S. Sriraman, S. Agarwal, E. S. Aydil, and D. Maroudas, Nature (London) 418, 62 (2002); C. W. Myles, B. C. Ha, and Y. K. Park, J. Phys. Chem. Solids 63, 1691 (2002); J. Non-Cryst. Solids 299, (2002).
12. See these recent examples: A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, J. Appl. Phys. 92, 2424 (2002); N. A. Schultz and P. C. Taylor, Phys. Rev. B 65, 235207 (2002); S. Sriraman, S. Agarwal, E. S. Aydil, and D. Maroudas, Nature (London) 418, 62 (2002); C. W. Myles, B. C. Ha, and Y. K. Park, J. Phys. Chem. Solids 63, 1691 (2002); J. Non-Cryst. Solids 299, (2002).
13. G. Yue, D. Han, and L. E. McNeil, J. Appl. Phys. 88, 4904 (2000).
14. S. Roorda, R. A. Hakvoort, A. van Veen, P. A. Stolk, and F. W. Saris, J. Appl. Phys. 72, 5145 (1992).
15. A. M. Johnson, D. H. Auston, P. R. Smith, J. C. Bean, J. P. Harbison, and A. C. Adams, Phys. Rev. B 23, 6816 (1981).
16. J. T. Kindt and C. A. Schmuttenmaer, J. Chem. Phys. 110, 8589 (1999), and references therein.
17. K. P. H. Lui and F. A. Hegmann, Appl. Phys. Lett. 78, 3478 (2001); F. A. Hegmann and K. P. H. Lui, Proc. SPIE 4643, 31 (2002).
18. K. P. H. Lui and F. A. Hegmann, Appl. Phys. Lett. 78, 3478 (2001); F. A. Hegmann and K. P. H. Lui, Proc. SPIE 4643, 31 (2002).
19. P. A. Stolk, L. Calcagnile, S. Roorda, W. C. Sinke, A. J. M. Berntsen, and W. F. van der Weg, Appl. Phys. Lett. 60, 1688 (1992).
20. J. O. White, S. Cuzeau, D. Hulin, and R. Vanderhaghen, J. Appl. Phys. 84, 4984 (1998).
21. H. Fritzsche, J. Non-Cryst. Solids 114, 1 (1989).
22. P. M. Fauchet, D. Hulin, R. Vanderhaghen, A. Mourchid, and W. L. Nighan Jr., J. Non-Cryst. Solids 141, 76 (1992).
23. K. E. Meyers, Q. Wang, and S. L. Dexheimer, Phys. Rev. B 64, 161309(R) (2001).
24. P. Uhd Jepsen, W. Schairer, I. H. Libon, U. Lemmer, N. E. Hecker, M. Birkholz, K. Lips, and M. Schall, Appl. Phys. Lett. 79, 1291 (2001).
25. C. M. Fortmann, Appl. Phys. Lett. 64, 3024 (1994).
26. R. H. Bube, Electronic Properties of Crystalline Solids (Academic, Orlando, 1974), p. 367.
27. P. G. Le Comber and W. E. Spear, Phys. Rev. Lett. 25, 509 (1970).
28. D. H. Auston, in Ultrashort Laser Pulses; Generation and Applications, 2nd ed., edited by W. Kaiser (Springer, Berlin, 1993), p. 188.
29. F. Gao, G. L. Carr, C. D. Porter, D. B. Tanner, G. P. Williams, C. J. Hirschmugl, B. Dutta, X. D. Wu, and S. Etemad. Phys. Rev. B 54, 700 (1996).
30. J. Linnros, J. Appl. Phys. 84, 275 (1998).
31. A. Esser, K. Seibert, H. Kurz, G. N. Parsons, C. Wang, B. N. Davidson, G. Lucovsky, and R. J. Nemanich, Phys. Rev. B 41, 2879 (1990).
32. K. Hattori, Y. Adachi, M. Anzai, H. Okamoto, and Y. Hamakawa, J. Appl. Phys. 76, 2841 (1994).
33. P. Popović, E. Bassanese, F. Smole, J. Furlan, S. Grebner, and R. Schwarz, J. Appl. Phys. 82, 4504 (1997).
34. J. Mangeney, N. Stelmakh, F. Aniel, P. Boucaud, and J.-M. Lourtioz, Appl. Phys. Lett. 80, 4711 (2002).
35. R. Pässler, Phys. Status Solidi B 85, 203 (1978); 86, K39 (1978); 86, K45 (1978).
36. R. Pässler, Phys. Status Solidi B 85, 203 (1978); 86, K39 (1978); 86, K45 (1978).
37. R. Pässler, Phys. Status Solidi B 85, 203 (1978); 86, K39 (1978); 86, K45 (1978).
38. Because of the small energy of the THz pulse, no phonon excitation is expected from the THz probe [A. Debernardi, M. Bernasconi, M. Cardona, and M. Parrinello, Appl. Phys. Lett. 71, 2692 (1997), and references therein]; thus phonon generation is expected to be due solely to thermalization of photogenerated carriers.