Ga vacancies in low-temperature-grown GaAs identified by slow positrons

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 638-640

  Gebauer, J ^a   Krause Rehberg, R ^a   Eichler, S ^a   Luysberg, M ^b   Sohn, H ^b   Weber, E R ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DEFECTS; DOPPLER EFFECT; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

GALLIUM VACANCIES; MAGNETIC CIRCULAR DICHROISM OF ABSORPTION; POSITRON ANNIHILATION;

SEMICONDUCTOR GROWTH;

EID: 0031552793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119814     Document Type: Article

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