Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1200-1204

  Specht, P ^a  

^a Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644449894     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590747     Document Type: Article

References (13)

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