Band anticrossing in dilute nitrides

Journal of Physics Condensed Matter

Volumn 16, Issue 31, 2004, Pages

  Shan, W ^a   Yu, K M ^a   Walukiewicz, W ^a   Wu, J ^a   Ager III, J W ^a   Haller, E E ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ARSENIC; CRYSTAL LATTICES; ELECTRON MOBILITY; GALLIUM; HYDROSTATIC PRESSURE; INDIUM; NEGATIVE IONS; NITROGEN; SEMICONDUCTOR MATERIALS; SILICON;

CONDUCTION-BAND STATES; DILUTE NITRIDE ALLOYS; MATRIX ELEMENTS; NITROGEN CONCENTRATIONS; NON-PARABOLIC SUBBANDS;

NITRIDES;

EID: 4043060003     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/31/024     Document Type: Article

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