Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2419-2421

  Prabhu, S S ^a   Ralph, S E ^a   Melloch, M R ^b   Harmon, E S ^c  

^a EMORY UNIVERSITY   (United States)

^b PURDUE UNIVERSITY   (United States)

^c MellWood Laboratories Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001493658     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118890     Document Type: Article

References (21)

1. A. J. Lochtefeld, M. R. Melloch, J. C. P. Chang, and E. S. Harmon, Appl. Phys. Lett. 69, 1465 (1996).
2. E. S. Harmon, M. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka, and C. L. Chang, Appl. Phys. Lett. 63, 2248 (1993).
3. F. Ghanikanov, G. Ru-Lin, W.-C. Chen, C. S. Chang, and C.-L. Pan, Appl. Phys. Lett. 67, 3465 (1995).
4. Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, J. Electron. Mater. 22, 1465 (1993).
5. G. L. Win, Mater. Sci. Eng. B 22, 9 (1993); P. Hautijarvi, J. Makinen, S. Palko, K. Saarinen, C. Corbel, and L. Liszkay, ibid., 16 (1993); S. A. McQuaid, R. E. Pritchard, R. C. Newman, S. O'Hagan, and M. Missous, ibid., 27 (1993).
6. G. L. Win, Mater. Sci. Eng. B 22, 9 (1993); P. Hautijarvi, J. Makinen, S. Palko, K. Saarinen, C. Corbel, and L. Liszkay, ibid., 16 (1993); S. A. McQuaid, R. E. Pritchard, R. C. Newman, S. O'Hagan, and M. Missous, ibid., 27 (1993).
7. G. L. Win, Mater. Sci. Eng. B 22, 9 (1993); P. Hautijarvi, J. Makinen, S. Palko, K. Saarinen, C. Corbel, and L. Liszkay, ibid., 16 (1993); S. A. McQuaid, R. E. Pritchard, R. C. Newman, S. O'Hagan, and M. Missous, ibid., 27 (1993).
8. M. R. Melloch, J. M. Woodall, N. Otsuka, K. Mahalingam, C. L. Chang, and D. D. Nolte, Mater. Sci. Eng. B 22, 31 (1993).
9. A. C. Warren, J. M. Woodall, P. D. Kirchner, X. Yin, F. Pollak, M. R. Melloch, N. Otsuka, and K. Mahalingam, Phys. Rev. B 46, 4617 (1992).
10. M. R. Melloch, N. Otsuka, J. M. Woodall, A. C, Warren, and J. L. Freeouf, Appl. Phys. Lett. 57, 1531 (1990).
11. A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grinschkowsky, D. T. McInturff, M. R. Melloch, and N. Otsuka, Appl. Phys. Lett. 57, 1331 (1990).
12. S. Gupta, M. Y. Frenkel, J. A. Valdmanis, J. F. Whitaker, F. W. Smith, and A. R. Calawa, Appl. Phys. Lett. 59, 3276 (1991).
13. H. H. Wang, J. F. Whitaker, A. Chin, J. Mazurowski, and J. Ballingall, J. Electron. Mater. 22, 1461 (1993).
14. B. Nabet, A. Youtz, F. Castro, P. Cooke, and A. Paolella, Appl. Phys. Lett. 67, 1748 (1995).
15. Y. Kostoulas, L. J. Waxer, I. A. Walmsley, G. W. Wicks, and P. M. Fauchet, Appl. Phys. Lett. 66, 1821 (1995).
16. S. D. Benjamin, H. S. Loka, A. Othonos, and P. W. E. Smith, Appl. Phys. Lett. 68, 2544 (1996).
17. X. Q. Zhou, H. M. van Driel, W. W. Ruhle, Z. Gogolak, and K. Ploog, Appl. Phys. Lett. 61, 3020 (1992).
18. It was shown that a similar THz response was achieved with an electron concentration only 13% that of the hole concentration. N. Katzenellenbogen and D. Grischkowsky, Appl. Phys. Lett. 61, 840 (1992).
19. S. E. Ralph and D. Grishkowsky, Appl. Phys. Lett. 59, 1972 (1991).
20. H. M. VanDriel, X. Q. Zhou, W. W. Ruhle, J. Kuhl, and K. Ploog, Appl. Phys. Lett. 60, 2246 (1992).
21. S. E. Ralph and Y. Chen, Phys. Rev. B 54, 5568 (1996).