Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2505-2507

  Ortiz, V ^a   Nagle, J ^a   Alexandrou, A ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b INSERM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLINGS; BAND GAP RENORMALIZATION; CARRIER DYNAMICS; HOLE POPULATIONS; LOW-TEMPERATURE-GROWN GAAS; MULTI-EXPONENTIAL DECAY; POINT DEFECT MODELS; PRECISE MODELING; REFLECTIVITY DATA; TRANSIENT REFLECTIVITY; VALENCE-BAND HOLES;

POINT DEFECTS; REFLECTION; SEMICONDUCTING GALLIUM;

GALLIUM ARSENIDE;

EID: 79955983338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1463209     Document Type: Article

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