Photomixing at 1.55 μm in ion-irradiated in0.53Ga 0.47As on InP

Optics Express

Volumn 14, Issue 5, 2006, Pages 1856-1861

  Chimot, N ^a   Mangeney, J ^a   Crozat, P ^a   Lourtioz, J M ^a   Blary, K ^b   Lampin, J F ^b   Mouret, G ^c   Bigourd, D ^c   Fertein, E ^c  

^a UNIV PARIS SUD   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c UNIVERSITÉ DU LITTORAL CÔTE D OPALE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; IONS; IRRADIATION; LOW TEMPERATURE EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

ION IRRADIATION; PHOTOMIXING;

MIXING;

EID: 33644777679     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.14.001856     Document Type: Article

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