Ultrafast high-intensity nonlinear absorption dynamics in low-temperature grown gallium arsenide

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2566-2568

  Siegner, U ^a   Fluck, R ^a   Zhang, G ^a   Keller, U ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000388028     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117701     Document Type: Article

References (19)

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19. Note that the curves in Fig. 3 have been individually normalized. The absolute signal strength decreases with decreasing growth temperature.