Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green's function techniques

Journal of Computational Electronics

Volumn 8, Issue 3-4, 2009, Pages 349-373

  Asenov, Asen ^a   Brown, Andrew R ^a   Roy, Gareth ^a   Cheng, Binjie ^a   Alexander, Craig ^a   Riddet, Craig ^a   Kovac, Urban ^a   Martinez, Antonio ^a   Seoane, Natalia ^a,b   Roy, Scott ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

Author keywords

MOSFET; Numerical simulation; Semiconductors; Variability

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; GREEN'S FUNCTION; SEMICONDUCTOR MATERIALS; STATISTICS; TOOLS; TRANSISTORS;

MOS-FET; NON-EQUILIBRIUM GREEN'S FUNCTION; RANDOM-DISCRETE-DOPANTS; STATISTICAL SIMULATION; STATISTICAL VARIABILITY; THICKNESS FLUCTUATIONS; UNIVERSITY OF GLASGOW; VARIABILITY;

MONTE CARLO METHODS;

EID: 77950185612     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-009-0292-0     Document Type: Article

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