Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs

Solid-State Electronics

Volumn 53, Issue 7, 2009, Pages 767-772

  Cheng, B ^a   Roy, S ^a   Brown, A R ^a   Millar, C ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Line edge roughness; Random discrete dopant; Statistical variability; Thin body devices; Trapped charge

Indexed keywords

LINE EDGE ROUGHNESS; RANDOM DISCRETE DOPANT; STATISTICAL VARIABILITY; THIN-BODY DEVICES; TRAPPED CHARGE;

GALERKIN METHODS; MOSFET DEVICES; NANOTECHNOLOGY; TERBIUM ALLOYS;

ROUGHNESS MEASUREMENT;

EID: 67349152374     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.03.008     Document Type: Article

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