Quantitative evaluation of statistical variability sources in a 45-nm technological node LP N-MOSFET

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 609-611

  Cathignol, Augustin ^a,b   Cheng, B ^c   Chanemougame, D ^a   Brown, A R ^c   Rochereau, K ^c   Ghibaudo, G ^b   Asenov, A ^c  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Matching; Mismatch; MOSFET; Parameter fluctuations; Variability

Indexed keywords

ANNEALING; ENERGY GAP; FERMI LEVEL; GRAIN BOUNDARIES; POLYSILICON; STATISTICAL METHODS;

FERMI-LEVEL PINNING; STATISTICAL VARIABILITY;

MOSFET DEVICES;

EID: 44849099442     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.922978     Document Type: Article

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