Three-Dimensional “Atomistic” Simulation of Discrete Random Dopant Distribution Effects in Sub-0.1μm MOSFET's

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 705-708

  Wong, Hon Sum ^a   Taur, Yuan ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; THRESHOLD VOLTAGE; CHARGE CARRIERS; DIFFUSION; DOPING (ADDITIVES); NUMERICAL METHODS; SIMULATION;

ATOMISTIC SIMULATIONS; DISCRETE RANDOM DOPANTS; DISTRIBUTION EFFECT; DOPANT ATOMS; DOPANT DISTRIBUTION; DRIFT DIFFUSION; INHOMOGENEITIES; MOSFET CHANNELS; MOSFETS; RANDOM FLUCTUATION;

MOSFET DEVICES;

DISCRETE RANDOM DOPANT DISTRIBUTION; DRIFT DIFFUSION; THREE DIMENSIONAL ATOMISTIC SIMULATION;

EID: 0027813761     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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