Monte Carlo particle-based simulations of deep-submicron n-MOSFETs with real-space treatment of electron-electron and electron-impurity interactions

Superlattices and Microstructures

Volumn 27, Issue 2, 2000, Pages 147-157

  Vasileska, D ^a   Gross, W J ^b   Ferry, D K ^a  

^a Arizona State University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; CRYSTAL IMPURITIES; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

DISCRETE IMPURITY EFFECTS;

MOSFET DEVICES;

EID: 0033734912     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0806     Document Type: Article

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