Statistics of grain boundaries in polysilicon

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 38-44

  Watanabe, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Entropy; Fluctuation; Grain boundary; MOS devices; Poisson distribution; Polysilicon; SRAM; Statistics

Indexed keywords

GRAIN BOUNDARIES; MOS DEVICES; POISSON DISTRIBUTION; STATISTICS; TRANSISTORS;

FLUCTUATION; NANOMETER-SCALE VARIATION;

POLYSILICON;

EID: 33846096695     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887212     Document Type: Article

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