Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulation

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 327-334

  Roy, Gareth ^a   Brown, Andrew R ^a   Asenov, Asen ^a   Roy, Scott ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Atomistic; Charge assignment; Density gradient; MOSFET

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; DIFFUSION; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; MOSFET DEVICES; POISSON EQUATION; QUANTUM THEORY; RESISTORS; SEMICONDUCTOR DOPING;

ATOMISTIC; CHARGE ASSIGNMENT; DENSITY GRADIENTS; MOSFET;

SUPERLATTICES;

EID: 3242675991     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.066     Document Type: Conference Paper

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