Impact of grain number fluctuations in the MOS transistor gate on matching performance

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2003, Pages 244-249

  Difrenza, R ^a,b   Vildeuil, J C ^a   Llinares, P ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; POLYSILICON; RANDOM PROCESSES;

CIRCUIT PERFORMANCE;

MOS DEVICES;

EID: 0038642443     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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