Quantum and coulomb effects in nanodevices

International Journal of Nanoscience

Volumn 4, Issue 3, 2005, Pages 305-361

  Vasileska, D ^a   Khan, H R ^a   Ahmed, S S ^a   Ringhofer, C ^b   Heitzinger, C ^b  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Discrete impurity effects; Nanodevice modeling; Quantum effects

Indexed keywords

COULOMB BLOCKADE; CRYSTAL IMPURITIES; MONTE CARLO METHODS; PASSIVATION; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICA; SINGLE CRYSTALS;

COULOMB INTERACTIONS; DISCRETE IMPURITY EFFECTS; NANODEVICE MODELING; QUANTUM EFFECTS;

NANOSTRUCTURED MATERIALS;

EID: 22844442676     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219581X05003164     Document Type: Article

References (99)

1. S. M. Sze and G. S. May, Fundamentals of Semiconductor Fabrication (John Wiley and Sons Inc., 2003).
2. P. D. Agnello, IBM J. Res. Dev. 46, 317 (2002).
3. International Technology Roadmap for Semiconductors, 2002 edn., Semiconductor Industry Association (SIA), Austin, Texas: SEMATECH, USA, 2706 Montopolis Drive, Austin, Texas 78741; http://www.itrs.net/ntrs/publntrs.nsf.
4. G. Moore, IEDM Tech. Digest, 11 (1975).
5. R. Dennard, F. H. Gaensslen, H. N. Yu, L. Rideout, E. Bassous and A. R. LeBlanc, IEEE J. Solid State Circuits 9, 256 (1974).
6. B. Yu et al., IEDM Tech. Dig. 937 (2001).
7. R. Chau, B. Boyanov, B. Doyle, M. Doczy, S. Datta, S. Hareland, B. Jin, J. Ka-valieros and M. Metz, 4th Int. Symp. Nanostructures and Mesoscopic Systems (2003), p. 17.
8. H. S. Wong, IBM J., Res. Dev. 46, 133 (2002).
9. W. Zhu, J. P. Han and T. P. Ma, IEEE Trans. Electron Dev. 51, 98 (2004).
10. J. Welser, J. L. Hoyt and J. F. Gibbons, IEDM Tech. Dig. 1000 (1992).
11. G. Formicone, D. Vasileska and D. K. Ferry, VLSI Design 6, 167 (1998).
12. D. Vasileska, G. Formicone and D. K. Ferry, Nanotechnology 10, 147 (1999).
13. P. M. Garone, V. Venkataraman and J. C. Sturm, IEEE Electron Dev. Lett. 13, 56 (1992).
14. http://eetimes.com/semi/news/OEG20021210S0049.
15. M. Leong, H.-S. Wong, E. Nowak, J. Kedzierski and E. Jones, ISQED, 492 (2002).
16. L. Geppert, IEEE Spect. (2004).
17. D. Vasileska and S. M. Goodnick, Mat. Sci. Engineering, Rep.: A Rev. J. R38, 181 (2002).
18. D. K. Ferry and S. M. Goodnick, Transport in Nanostructures (Cambridge University Press, Cambridge, UK, 1997).
19. M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang and K. Rim, J. Appl. Phys. 94, 1079 (2003).
20. N. Sano, A. Hiroki and K. Matsuzawa, IEEE Trans. Nanotech. 1, 63 (2002).
21. I. Knezevic, Ph.D. Dissertation, Arizona State University (2004).
22. R. W. Keyes, Appl. Phys. 8, 251 (1975).
23. T. Mizuno, J. Okumtura and A. Toriumi, IEEE Trans. Electron Dev. 41, 2216 (1994).
24. M. V. Fischetti, J. Comput. Electron. 2, 73 (2000).
25. M. P. Lilly, J. P. Eisenstein, L. N. Pfeiffer and K. W. West, Phys. Rev. Lett. 80, 1714 (1998).
26. H. S. Wong and Y. Taur, Proc. IEDM, 29.2.1 (1993).
27. W. J. Gross, D. Vasileska- and D. K. Ferry, VLSI Design 10, 437 (2000).
28. A. Asenov, IEEE Trans. Electron Dev. 45, 2505 (1998).
29. W. J. Gross, Ph.D. Dissertation, Arizona State University (2000).
30. N. Sano, K. Matsuzawa, M. Mukai and N. Nakayama, in Proc. IEDM Tech. Digest 275 (2000).
31. D. K. Ferry, A. M. Kriman, M. J. Kann and R. P. Joshi, Comput. Phys. Comm. 67, 119 (1991).
32. L. R. Logan and J. L. Egley, Phys. Rev. B 47, 12532 (1993).
33. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer-Verlag, New York, 1989).
34. R. H. Dennard, F. H. Gaensslen, H.-N. Yu, V. L. Rideout, E. Bassous and A. R. leBlanc, IEEE J. Solid-State Circuits 9, 256 (1974).
35. J. R. Brews, W. Fichtner, E. H. Nicollian and S. M. Sze, IEEE Electron Dev. Lett. 1, 2 (1980).
36. G. Bacarani and M. R. Worderman, Proc. IEDM (1982), p. 278.
37. M.-S. Liang, J. Y. Choi, P.-K. Ko and C. Hu, IEEE Trans. Electron Dev. 33, 409 (1986).
38. A. Hartstein and N. F. Albert, Phys. Rev. B 38, 1235 (1988).
39. M. J. van Dort, P. H. Woerlee, A. J. Walker, C. A. H. Juffermans and H. Lifka, IEEE Trans. Electron Dev. 39, 932 (1992).
40. M. J. van Dort, P. H. Woerlee and A. J. Walker, Solid-State Electron. 37, 411 (1994).
41. D. Vasileska and D. K. Ferry, in the Technical Proc. First Int. Conf. Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators (1998), p. 408.
42. S. Takagi and A. Toriumi, IEEE Trans. Electron Dev. 42, 2125 (1995).
43. S. A. Hareland, S. Krishnamurthy, S. Jallepali, C.-F. Yeap, K. Hasnat, A. F. Tasch, Jr. and C. M. Maziar, IEEE Trans. Electron Dev. 43, 90 (1996).
44. D. Vasileska, D. K. Schroder and D. K. Ferry, IEEE Trans. Electron Dev. 44, 584 (1997).
45. K. S. Krisch, J. D. Bude and L. Manchanda, IEEE Electron Dev. Lett. 17, 521 (1996).
46. L. de Broglie, C. R. Acad. Sci. Paris 183, 447 (1926).
47. L. de Broglie, C. R. Acad. Sci. Paris 184, 273 (1927).
48. E. Madelung, Z. Phys. 40, 322 (1926).
49. D. Bohm, Phys. Rev. 85, 166 (1952).
50. D. Bohm, Phys. Rev. 85, 180 (1952).
51. C. Dewdney and B. J. Hiley, Found. Phys. 12, 27 (1982).
52. G. J. lafrate, H. L. Grubin and D. K. Ferry, J. de Phys. 42 (Colloq. 7), 307 (1981).
53. E. Wigner, Phys. Rev. 40, 749 (1932).
54. D. K. Ferry and J.-R. Zhou, Phys. Rev. B 48, 7944 (1993).
55. P. Feynman and H. Kleinert, Phys. Rev. A 34, 5080 (1986).
56. C. L. Gardner and C. Ringhofer, Phys. Rev. E 53, 157 (1996).
57. C. Ringhofer and C. L. Gardner, VLSI Design 8, 143 (1998).
58. D. Vasileska, and S. S. Ahmed, IEEE Trans. Electron Dev. 52, 227 (2005).
59. D. K. Ferry, Superlattices and Microstructures 27, 61 (2000).
60. C. Ringhofer, S. Ahmed and D. Vasileska, J. Comput. Electron. 2, 113 (2003).
61. C. Ringhofer, C. Gardner and D. Vasileska, Inter. J. High Speed Electron. Syst. 13, 771 (2003).
62. S. S. Ahmed, Ph.D. Dissertation, Arizona State University (2004).
63. C. Ringhofer, S. S. Ahmed and D. Vasileska, Superlattices and Microstructures 34, 311 (2003).
64. Y. Omura, S. Horiguchi, M. Tabe and K. Kishi, IEEE Electron Dev. Lett. 14, 569 (1993).
65. S. M. Ramey and D. K. Ferry, IEEE Trans. Nanotechnol. 2, 110 (2003).
66. S. Hasan, J. Wang and M. Lundstrom, Solid-State Elect. 48, 867 (2004).
67. S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge Studies in Semiconductor Physics Series, 1998.
68. T. Mizuno, J. Okamura and A. Toriumi, IEEE Trans. Electron Dev. 41, 2216 (1994).
69. T. Mizuno, Jpn. J. Appl. Phys. 35, 842 (1996).
70. J. T. Horstmann, U. Hilleringmann and K. F. Goser, IEEE Trans. Electron Dev. 45, 299 (1998).
71. P. A. Stolk, F. P. Widdershoven and D. B. M. Klaassen, IEEE Trans. Electron Dev. 45, 1960 (1998).
72. K. Nishinohara, N. Shigyo and T. Wada, IEEE Trans. Electron Dev. 39, 634 (1992).
73. J.-R. Zhou and D. K. Ferry, IEEE Comput. Sci. Eng. 2, 30 (1995).
74. D. Vasileska, W. J. Gross, V. Kafedziski and D. K. Ferry, VLSI Design 8, 301 (1998).
75. D. Vasileska, W. J. Gross and D. K. Ferry, Extended Abstracts IWCE-6, Osaka 1998, IEEE Cat. No. 98EX116, 259.
76. X. Tang, V. K. De and J. D. Meindl, IEEE Trans. VLSI Sys. 5, 369 (1997).
77. P. Lugli and D. K. Ferry, IEEE Trans. Electron Dev. 32, 2431 (1986).
78. A. M. Kriman, M. J. Kann, D. K. Ferry and R. Joshi, Phys. Rev. Lett. 65, 1619 (1990).
79. W. J. Gross, D. Vasileska and D. K. Ferry, VLSI Design 10, 437 (2000).
80. D. Vasileska, W. J. Gross and D. K. Ferry, Superlattices and Microstructures 27, 147 (2000).
81. A. Asenov, IEEE Trans. Electron Dev. 45, 2505 (1998).
82. A. Asenov and S. Saini, IEEE Trans. Electron Dev. 46, 1718 (1999).
83. L. Greengard and V. Rokhlin, J. Comput. Phys. 135, 280 (1997).
84. R. Beatson and L. Greengard, A short course on fast multipole methods, Wavelets, Multilevel Methods and Elliptic PDEs, Numer. Math. Sci. Comput. Oxford University Press, (New York, 1997), pp. 1-37.
85. H. Cheng, L. Greengard and V. Rokhlin, J. Comput. Phys. 155, 468 (1999).
86. FMMPART3D user's guide, version 1.0 ed., MadMax Optics, Hamden, CT, USA.
87. R. W. Hockney and J. W. Eastwood, Computer Simulation Using Particles (McGraw-Hill, New York, 1981).
88. C. J. Wordelman and U. Ravaioli, IEEE Tran. Electron Dev. 47, 410 (2000).
89. W. J. Gross, D. Vasileska and D. K. Ferry, IEEE Electron Dev. 47, 1831 (2000).
90. A. D. Holberg, CMOS Analog Circuit Design (Saunders College Publishing, New York, 1987).
91. B. Y. A. El-Mansy, IEEE Trans. Electron Dev. 45, 620 (1998).
92. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).
93. J. T. Horstmann, U. Hilleringmann and K. F. Goser, IEEE Trans. Electron Dev. 45, 299 (1998).
94. P. A. Stolk, F. P. Widdershoven and B. M. Klaassen, IEEE Trans. Electron Dev. 45, 1960 (1998).
95. W. J. Gross, D. Vasileska and D. K. Ferry, J. Appl. Phys. 91, 3737 (2002).
96. H. Majima, H. Ishikuro and T. Hiramoto, IEEE Electron Dev. Lett. 21, 396 (2000).
97. H. R. Khan, D. Vasileska, S. S. Ahmed, C. Ringhofer and C. Heitzinger, J. Comput. Electron., in press.
98. L. Chang et al., IEDM Tech. Dig., 719 (2002).
99. C. Heitzinger, C. Ringhofer, S. S. Ahmed and D. Vasileska, J. Comput. Electron., in press.