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Volumn 7273, Issue , 2009, Pages

Pattern transfer process development for EUVL

Author keywords

EUV; EUVl; Hard mask; Pattern transfer; Resist; TEG; Test chip; Under layer

Indexed keywords

EUV; EUVL; HARD MASK; PATTERN TRANSFER; RESIST; TEG; TEST CHIP; UNDER LAYER;

EID: 65849212824     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.812928     Document Type: Conference Paper
Times cited : (22)

References (6)
  • 4
    • 58749084774 scopus 로고    scopus 로고
    • Side wall degradation of chemically amplified resists based on poly(4hydroxystyrene) for extreme ultraviolet lithography
    • Kozawa, T., Tagawa, S., "Side Wall Degradation of Chemically Amplified Resists Based on Poly(4hydroxystyrene) for Extreme Ultraviolet Lithography", Jpn. J. Appl. Phys. 47, 7822-7826 (2008).
    • (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 7822-7826
    • Kozawa, T.1    Tagawa, S.2
  • 6
    • 65849148619 scopus 로고    scopus 로고
    • EUV-resist outgassing wuantiflcation methods and application
    • Kobayashi, S., Santillan, J. J. S., Oizumi, H., Itani, T., "EUV-resist outgassing wuantiflcation methods and application", Proc. SPIE 7273, 7273-8114 (2009).
    • (2009) Proc. SPIE , vol.7273 , pp. 7273-8114
    • Kobayashi, S.1    Santillan, J.J.S.2    Oizumi, H.3    Itani, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.