Predicting lithography costs - Guidance for ≤ 32 nm patterning solutions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Hazelton, Andrew J ^a   Wüest, Andrea ^b   Hughes, Greg ^b   Lercel, Michael ^b  

^a NIKON CORPORATION   (Japan)

^b SEMATECH   (United States)

Author keywords

Cost of ownership; Double patterning; EUVL; High index immersion; Lithography; Mask costs

Indexed keywords

COMPUTER NETWORKS; COST EFFECTIVENESS; DEFECT DENSITY; ELECTRON BEAM LITHOGRAPHY; MASKS; OPTICS; SOLUTIONS; THROUGHPUT;

45 NM HALF PITCH; COST OF OWNERSHIP (COO); DOUBLE PATTERNING; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) MASKS; HIGH INDEX; HIGH-THROUGHPUT (HT); IMMERSION LITHOGRAPHY (IML); MASK BLANKS; MASK COSTS; MASK TECHNOLOGY; NEW TECHNIQUES; NEXT-GENERATION LITHOGRAPHY (NGL); PHOTO MASKING; PROCESS COSTS; SIMPLE STRUCTURES; SINGLE EXPOSURE;

TECHNOLOGY;

EID: 45549103032     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793129     Document Type: Conference Paper

References (5)

1. International Technology Roadmap for Semiconductors, 2007 Update, Lithography chapter, www.itrs.org
2. Seidel, Phil, "EUV Lithography Cost-of-Ownership Considerations," 2007 EUVL Symposium, Sapporo, Japan. October 29, 2007.
3. Hughes, Greg, "Mask and wafer cost of ownership from 65 to 22nm half-pitch nodes," to be published in Proc. Of SPIE Vol. 7028, 7028-60 (2008).
4. www.icknowledge.com
5. Pain, Laurent et al, "MAGIC: A European Program to Push the Insertion of Maskless Lithography," to be published in Proc. of SPIE Vol. 6921, 6921-49 (2008).