Non-CA resists for 193 nm immersion lithography: Effects of chemical structure on sensitivity

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Blakey, Idriss ^a   Chen, Lan ^a   Goh, Yong Keng ^a   Lawrie, Kirsten ^a   Chuang, Ya Mi ^a   Piscani, Emil ^b   Zimmerman, Paul A ^b   Whittaker, Andrew K ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b NONE   (United States)

Author keywords

193 nm immersion lithography; Non CAR; Non chemically amplified resists; Polysulfone

Indexed keywords

193 NM IMMERSION LITHOGRAPHY; ATTENUATED TOTAL REFLECTANCE; CHEMICAL CONTRAST; CHEMICAL STRUCTURE; CHEMICALLY AMPLIFIED RESIST; GRAZING ANGLES; NON-CAR; NON-CHEMICALLY AMPLIFIED RESISTS; PHOTOACID GENERATORS; POLYNORBORNENE; POSTEXPOSURE BAKE;

BIOMATERIALS; ELECTRON BEAM LITHOGRAPHY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IONIZING RADIATION; PHOTONS; PHOTORESISTORS; PHOTORESISTS; POLYSULFONES; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

SILICON WAFERS;

EID: 65849278217     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814076     Document Type: Conference Paper

References (10)

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