Estimation of cost comparison of lithography technologies at the 22 nm half-pitch node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Wüest, Andrea ^a   Hazelton, Andrew J ^b   Hughes, Greg ^a  

^a SEMATECH   (United States)

^b NIKON CORPORATION   (Japan)

Author keywords

Cost of ownership; Double patterning; EUVL; Lithography; Mask costs

Indexed keywords

COST ADVANTAGES; COST COMPARISONS; COST OF OWNERSHIP; DOUBLE PATTERNING; EUVL; MASK COST; MASK COSTS; PROCESS STEPS; SENSITIVITY STUDIES;

COBALT COMPOUNDS; EXTREME ULTRAVIOLET LITHOGRAPHY; MASKS; TECHNOLOGY;

COSTS;

EID: 67149125975     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814255     Document Type: Conference Paper

References (4)

1. Hazelton, AJ., Wüest, A., Hughes G., Litt, L.C. and Goodwin, F., "Cost of Ownership of Future Lithography Technologies," Proc. of SPIE 7140 71401Q (2008).
2. International Technology Roadmap for Semiconductors, 2007 Update, Lithography chapter, www.itrs.org
3. Seidel, P., "EUV Lithography Cost-of-Ownership Considerations," 2007 EUVL Symposium, (2007).
4. Hughes, G., Litt, L.C., Wüest, A. and Palaiyanur, S., "Mask and wafer cost of ownership from 65 to 22nm half-pitch nodes," Proc. of SPIE 7028 70281P (2008).