32 nm pattern collapse modeling with radial distance and rinse speed

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Kim, Jong Sun ^a   Chang, Wook ^a   Park, Seoung Wook ^a   Oh, Hye Keun ^a   Lee, Suk Joo ^b   Kim, Sung Hyuk ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Critical aspect ratio; Pattern collapse; Radial distance; Rinse speed; Spinning wafer

Indexed keywords

CENTRIFUGAL PUMPS; COMPUTER SIMULATION; DRYING; PROBLEM SOLVING; SPEED; SPINNING (FIBERS);

CRITICAL ASPECT RATIO; PATTERN COLLAPSE; RADIAL DISTANCE; RINSE SPEED; SPINNING WAFER;

PHOTORESISTS;

EID: 35148838609     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712220     Document Type: Conference Paper

References (7)

1. T. Tanaka, M. Morigami, and N. Atoda, Jpn. J. Appl. Phys., 32, 6059, 1993.
2. G. K. Batchelor, An Introduction to Fluid Dynamics, Cambridge University Press, London, 1967.
3. J. H. Hwang and F. Ma, J. Appl. Phys., 66, 1, 1989.
4. A. W. Adamson, A. P. Gast, Physical Chemistry of Surfaces, 6th ed. John Wiley & Sons, New York, 1997.
5. W. C. Young, Roark's Formulas for Stress and Strain, 6th ed. McGraw-Hill, New York, 1989.
6. F. P. Beer and E. R. Jr. Johnston, Mechanics of Materials, McGraw-Hill, New York, 1981.
7. H. J. Lee, J. T. Park, J. Y. Yoo, I. An, and H. K. Oh, J. Korean Phys. Soc. 42, 250, 2003.