Using KLUP for understanding trends in EUV resist performance

Journal of Photopolymer Science and Technology

Volumn 21, Issue 3, 2008, Pages 429-434

  Gronheid, Roel ^a   Van Roey, Frieda ^a   Van Steenwinckel, David ^b  

^a IMEC   (Belgium)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Chemically amplified resists; Line width roughness; Resolution; Sensitivity

Indexed keywords

EID: 50149111332     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.21.429     Document Type: Article

References (14)

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