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Volumn 7271, Issue , 2009, Pages

Integration of EUV lithography in the fabrication of 22-nm node devices

Author keywords

EUV device integration; EUV mask; EUV OPC; EUV resist process; EUVL; Extreme ultraviolet lithography

Indexed keywords

EUV DEVICE INTEGRATION; EUV MASK; EUV OPC; EUV RESIST PROCESS; EUVL;

EID: 65849248744     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814379     Document Type: Conference Paper
Times cited : (60)

References (22)
  • 1
    • 79959357002 scopus 로고    scopus 로고
    • The use of EUV lithography to produce demonstration devices
    • La Fontaine, B., et al., "The use of EUV lithography to produce demonstration devices," Proc. SPIE 6921, 69210P (2008).
    • (2008) Proc. SPIE , vol.6921
    • La Fontaine, B.1
  • 2
    • 62649131549 scopus 로고    scopus 로고
    • An investigation of EUV lithography defectivity
    • Cummings, K. D., et al., "An investigation of EUV lithography defectivity," Proc. SPIE 7122, 71222G (2008).
    • (2008) Proc. SPIE , vol.7122
    • Cummings, K.D.1
  • 3
    • 67149097445 scopus 로고    scopus 로고
    • LPP source system development for HVM (Keynote)
    • Paper 7271-7302, 24 February
    • Brandt, D., et al., "LPP source system development for HVM (Keynote)," Paper 7271-7302, SPIE Advanced Lithography (24 February, 2009).
    • (2009) SPIE Advanced Lithography
    • Brandt, D.1
  • 4
    • 67149090345 scopus 로고    scopus 로고
    • Sn DPP source-collector modules: Status of alpha source, beta developments, and HVM experiments
    • Paper 7271-7309, 24 February
    • Corthout, M., et al., "Sn DPP source-collector modules: Status of alpha source, beta developments, and HVM experiments," Paper 7271-7309, SPIE Advanced Lithography (24 February, 2009).
    • (2009) SPIE Advanced Lithography
    • Corthout, M.1
  • 5
    • 67149145910 scopus 로고    scopus 로고
    • Ion beam deposition for defect-free EUVL mask blanks
    • Kearney, P., et al., "Ion beam deposition for defect-free EUVL mask blanks," Proc. SPIE 6921, 6921IX (2008).
    • (2008) Proc. SPIE , vol.6921
    • Kearney, P.1
  • 6
    • 45449117473 scopus 로고    scopus 로고
    • 32 nm logic patterning options with immersion lithography
    • Lai, K., et al., "32 nm logic patterning options with immersion lithography," Proc SPIE 6924, 69243C (2008).
    • (2008) Proc SPIE , vol.6924
    • Lai, K.1
  • 9
    • 50249149576 scopus 로고    scopus 로고
    • A 32 nm CMOS low power SoC platform technology for foundry applications with functional high density SRAM
    • IEDM.2007.4418918 10-12 December
    • Wu, S.-Y., et al., "A 32 nm CMOS low power SoC platform technology for foundry applications with functional high density SRAM," Electron Devices Meeting, 2007. IEDM.2007.4418918 (10-12 December 2007).
    • (2007) Electron Devices Meeting, 2007
    • Wu, S.-Y.1
  • 11
    • 67149100583 scopus 로고    scopus 로고
    • Shadow effect in EUV ADT imaging
    • Lake Tahoe, CA 29 September
    • Koay, C.-S. and McIntyre, G., "Shadow effect in EUV ADT imaging," EUVL Symposium, Lake Tahoe, CA (29 September, 2008).
    • (2008) EUVL Symposium
    • Koay, C.-S.1    McIntyre, G.2
  • 12
    • 67149098345 scopus 로고    scopus 로고
    • Modeling and experiments of non-telecentric thick mask effects for EUV lithography
    • Paper 7271-7348, 25 February
    • McIntyre, G., Koay, C.-S., Mizuno, H., Burkhardt, M., and Wood, O., "Modeling and experiments of non-telecentric thick mask effects for EUV lithography," Paper 7271-7348, SPIE Advanced Lithography (25 February 2009).
    • (2009) SPIE Advanced Lithography
    • McIntyre, G.1    Koay, C.-S.2    Mizuno, H.3    Burkhardt, M.4    Wood, O.5
  • 13
    • 67149101478 scopus 로고    scopus 로고
    • Flare evaluation of ASML alpha demo tool
    • Paper 7271-7330, 25 February
    • Mizuno, H., et al., "Flare evaluation of ASML Alpha Demo Tool," Paper 7271-7330, SPIE Advanced Lithography (25 February 2009).
    • (2009) SPIE Advanced Lithography
    • Mizuno, H.1
  • 15
    • 67149101887 scopus 로고    scopus 로고
    • Performance of the full-field EUV systems
    • Meiling, H., et al., "Performance of the full-field EUV systems," Proc. SPIE 6921, 69210L (2008).
    • (2008) Proc. SPIE , vol.6921
    • Meiling, H.1
  • 16
    • 79959345348 scopus 로고    scopus 로고
    • Evaluation of EUV resist materials for use at the 32 nm half-pitch node
    • Wallow, T., et al., "Evaluation of EUV resist materials for use at the 32 nm half-pitch node," Proc. SPIE 6921, 69211F (2008).
    • (2008) Proc. SPIE , vol.6921
    • Wallow, T.1
  • 17
    • 84960260839 scopus 로고    scopus 로고
    • EUV source requirements for EUV lithography
    • Vivek Bakshi, Ed., SPIE Press, Bellingham, WA
    • Ota, K., Watanabe, Y., Banine, V., and Franken, H., "EUV source requirements for EUV lithography." EUV Sources for Lithography, Vivek Bakshi, Ed., 27-43, SPIE Press, Bellingham, WA (2006).
    • (2006) EUV Sources for Lithography , pp. 27-43
    • Ota, K.1    Watanabe, Y.2    Banine, V.3    Franken, H.4
  • 18
    • 67149145911 scopus 로고    scopus 로고
    • Sub-22 nm half-pitch (HP) EUV resist imaging results
    • Lake Tahoe, CA, 30 September
    • Koh, C., Park, J.-O., Ma, A., and Naulleau, P., "Sub-22 nm half-pitch (HP) EUV resist imaging results," EUVL Symposium, Lake Tahoe, CA, 30 September 2008.
    • (2008) EUVL Symposium
    • Koh, C.1    Park, J.-O.2    Ma, A.3    Naulleau, P.4
  • 22
    • 67149098342 scopus 로고    scopus 로고
    • Development status of Canon's full-field EUVL tool
    • Paper 7271-7368, 26 February
    • Hasegawa, T., Uzawa, S., Honda, T., and Morishima, H., "Development status of Canon's full-field EUVL tool," Paper 7271-7368, SPIE Advanced Lithography (26 February 2009).
    • (2009) SPIE Advanced Lithography
    • Hasegawa, T.1    Uzawa, S.2    Honda, T.3    Morishima, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.