Collapse behavior of single layer 193 and 157 nm resists: Use of surfactants in the rinse to realize the sub 130 nm nodes

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 I, Issue , 2002, Pages 254-261

  Hien, Stefan ^a   Rich, Georgia ^b   Molina, Gilbert ^b   Cao, Heidi B ^b   Nealey, Paul F ^b  

^a INFINEON TECHNOLOGIES   (United States)

^b UNIVERSITY OF WISCONSIN   (United States)

Author keywords

Pattern collapse; Resist benchmarking; Surfactant

Indexed keywords

ASPECT RATIO; CONTACT ANGLE; DRYING; MASKS; PHASE SHIFT; PLASMA ETCHING; SURFACE ACTIVE AGENTS; SURFACE TENSION; X RAY LITHOGRAPHY;

PATTERN COLLAPSE;

PHOTORESISTS;

EID: 0036030912     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474205     Document Type: Article

References (12)

1. H. Cao, P. Nealey, W.D. Domke, J. Vac. Sci. and Tech., B18, 3303, (2000).
2. Tanaka, T., M. Morigami, and N. Atoda, Japanese Journal of Applied Physics, 1993. 32(12B): p. 6059-6064.
3. R. Kwong et al., Proc. SPIE Vol. 4345, 50-57, (2000).
4. Q. Lin et al., Proc. SPIE Vol. 3333, 278, (1998).
5. S. Hien et al., Proc. SPIE Vol. 3333, 154-164, (1998).
6. J. Simons, D. Goldfarb, M. Angelopoulos, S. Messick, W. Moreau, C. Robinson, J. De Pablo, P. Nealey, Proc. SPIE Vol. 4345, 19-29, (2000).
7. C.L. Mc Adams et al., Proc. SPIE Vol. 4345, 327-334, (2000).
8. Raymond J. Hung et al., SPIE Proc. 4345(2001), 385-395.
9. T. Kajita et al., Proc. SPIE Vol. 4345, 712-724, (2000).
10. M. Yamamoto et al., Proc. SPIE Vol. 4345, 712-724, (2000).
11. H.B. Cao, K. Yoshimoto, M.P. Stoykovich, P.F. Nealey, L.E. Ocola, Sematech report Tech Transfer # 01114201A-ENG.
12. Semicondutor Industry Association, International Technology Roadmap for Semiconductors: 1999 edition, Austin, TX: International Sematech, 1999.