-
2
-
-
0036624471
-
Simultaneous voltage scaling and gate sizing for low-power design
-
Jun.
-
C. Chen and M. Sarrafzadeh, "Simultaneous voltage scaling and gate sizing for low-power design, "IEEE Trans. Circuits Syst. II, Analog Digit. Signal Process., vol.49, pp. 400-408, Jun. 2002.
-
(2002)
IEEE Trans. Circuits Syst. II, Analog Digit. Signal Process.
, vol.49
, pp. 400-408
-
-
Chen, C.1
Sarrafzadeh, M.2
-
3
-
-
84893738755
-
Dynamic VTH scaling scheme for active leakage power reduction
-
C. H. Kim and K. Roy, "Dynamic VTH scaling scheme for active leakage power reduction, "in Proc. Design Autom. Test Eur., 2002, pp. 163-167.
-
(2002)
Proc. Design Autom. Test Eur.
, pp. 163-167
-
-
Kim, C.H.1
Roy, K.2
-
4
-
-
0035694264
-
Impact of gate tunneling current in scaled MOS on circuit performance: A simulation study
-
C. H. Choi, K. Nam, Z. Yu, and R. W. Dutton, "Impact of gate tunneling current in scaled MOS on circuit performance: A simulation study, "IEEE Trans. Electron Devices, vol.48, no.12, pp. 2823-2829, 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.12
, pp. 2823-2829
-
-
Choi, C.H.1
Nam, K.2
Yu, Z.3
Dutton, R.W.4
-
5
-
-
0030212001
-
1.5 nm direct-tunneling gate oxide Si MOS-FET's
-
Aug.
-
H. S. Momose, M. Ono, T. Yoshitomo, T. Ohguro, S. Nakamura, M. Saito, and H. Iwai, "1.5 nm direct-tunneling gate oxide Si MOS-FET's, "IEEE Trans. Electron Devices, vol.43, pp. 1233-1242, Aug. 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 1233-1242
-
-
Momose, H.S.1
Ono, M.2
Yoshitomo, T.3
Ohguro, T.4
Nakamura, S.5
Saito, M.6
Iwai, H.7
-
6
-
-
0030129137
-
Band-to-band tunneling model of gate induced drain leakage current in silicon MOS transistors
-
J. Jomaah, G. Ghibaudo, and F. Balestra, "Band-to-band tunneling model of gate induced drain leakage current in silicon MOS transistors, "Electron. Lett., vol.32, no.8, pp. 767-769, 1996.
-
(1996)
Electron. Lett.
, vol.32
, Issue.8
, pp. 767-769
-
-
Jomaah, J.1
Ghibaudo, G.2
Balestra, F.3
-
7
-
-
0022290066
-
Halo doping effects in submicron DI-LDD device design
-
C. F. Codella and S. Ogura, "Halo doping effects in submicron DI-LDD device design, "in Int. Electron Devices Meeting, 1985, vol.31, pp. 230-233.
-
(1985)
Int. Electron Devices Meeting
, vol.31
, pp. 230-233
-
-
Codella, C.F.1
Ogura, S.2
-
8
-
-
0037321205
-
A single Vt low-leakage gated-ground cache for deep submicron
-
A. Agarwal, H. Li, and K. Roy, "A single Vt low-leakage gated-ground cache for deep submicron, "IEEE J. Solid State Circuits, vol.38, pp. 319-328, 2003.
-
(2003)
IEEE J. Solid State Circuits
, vol.38
, pp. 319-328
-
-
Agarwal, A.1
Li, H.2
Roy, K.3
-
9
-
-
0036292923
-
Evaluation on power reduction applying gated clock approaches
-
G. Palumbo, F. Pappalardo, and S. Sannella, "Evaluation on power reduction applying gated clock approaches, "in Proc. IEEE Int. Symp. Circuits Syst., 2002, vol.4, pp. 85-88.
-
(2002)
Proc. IEEE Int. Symp. Circuits Syst.
, vol.4
, pp. 85-88
-
-
Palumbo, G.1
Pappalardo, F.2
Sannella, S.3
-
10
-
-
0034477838
-
Effects of global interconnect optimizations on performance estimation of deep submicron design
-
Y. Cao, C. Hu, X. Huang, A. B. Kahng, S. Muddu, D. Stroobandt, and D. Sylvester, "Effects of global interconnect optimizations on performance estimation of deep submicron design, "in Proc. IEEE/ACM Int. Conf. Comput. Aided Design, 2000, pp. 56-61.
-
(2000)
Proc. IEEE/ACM Int. Conf. Comput. Aided Design
, pp. 56-61
-
-
Cao, Y.1
Hu, C.2
Huang, X.3
Kahng, A.B.4
Muddu, S.5
Stroobandt, D.6
Sylvester, D.7
-
12
-
-
84874787693
-
Logic optimization of unidirectional circuits with structural methods
-
L. Entrena, C. Lopez, E. Olias, E. S. Millan, and J. A. Espejo, "Logic optimization of unidirectional circuits with structural methods, "in Proc. On-line Testing Workshop, 2001, pp. 43-47.
-
(2001)
Proc. On-line Testing Workshop
, pp. 43-47
-
-
Entrena, L.1
Lopez, C.2
Olias, E.3
Millan, E.S.4
Espejo, J.A.5
-
13
-
-
84969506377
-
On the optimization power of redundancy addition and removal for sequential logic optimization
-
E. S. Millan, L. Entrena, and J. A. Espejo, "On the optimization power of redundancy addition and removal for sequential logic optimization, "in Proc. Digit. Syst. Design, 2001, pp. 292-299.
-
(2001)
Proc. Digit. Syst. Design
, pp. 292-299
-
-
Millan, E.S.1
Entrena, L.2
Espejo, J.A.3
-
14
-
-
0032545893
-
Energy recovery logic circuit without non-adiabatic energy loss
-
Feb.
-
J. Lim, K. Kwon, and S.-I. Chae, "Energy recovery logic circuit without non-adiabatic energy loss, "Electron. Lett., vol.34, no.4, pp. 344-346, Feb. 1998.
-
(1998)
Electron. Lett.
, vol.34
, Issue.4
, pp. 344-346
-
-
Lim, J.1
Kwon, K.2
Chae, S.-I.3
-
15
-
-
0035242870
-
Robust subthreshold logic for ultra-low power operation
-
DOI 10.1109/92.920822, Low Power Electronics and Design
-
H. Soeleman, K. Roy, and B. C. Paul, "Robust sub-threshold logic for ultra-low power operation, " IEEE Trans. Very Large Scale Integr.(VLSI) Syst., vol.9, no.1, pp. 90-99, 2001. (Pubitemid 32922814)
-
(2001)
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
, vol.9
, Issue.1
, pp. 90-99
-
-
Soeleman, H.1
Roy, K.2
Paul, B.C.3
-
16
-
-
0026853681
-
Low-power CMOS digital design
-
Apr.
-
A. P. Chandrakasan, S. Sheng, and R. W. Broderson, "Low-power CMOS digital design, "IEEE J. Solid-State Circuits, vol.27, pp. 473-484, Apr. 1992.
-
(1992)
IEEE J. Solid-State Circuits
, vol.27
, pp. 473-484
-
-
Chandrakasan, A.P.1
Sheng, S.2
Broderson, R.W.3
-
17
-
-
50249152290
-
Performance evaluation of analog circuits wirh deep submicrometer MOSFETs in the subthreshold regime of operation
-
S. Chakraborty, S. Baishya, A. Mallik, and C. K. Sarkar, "Performance evaluation of analog circuits wirh deep submicrometer MOSFETs in the subthreshold regime of operation, "in Proc. 1st Int. Conf. Indus. Informational Syst., 2006, pp. 99-102.
-
(2006)
Proc. 1st Int. Conf. Indus. Informational Syst.
, pp. 99-102
-
-
Chakraborty, S.1
Baishya, S.2
Mallik, A.3
Sarkar, C.K.4
-
18
-
-
0030243260
-
A four-quadrant subthreshold mode multiplier for analog neural-network applications
-
Sep.
-
D. Coue and G. Wilson, "A four-quadrant subthreshold mode multiplier for analog neural-network applications, "IEEE Trans. Neural Netw., vol.7, no.5, pp. 1212-1219, Sep. 1996.
-
(1996)
IEEE Trans. Neural Netw.
, vol.7
, Issue.5
, pp. 1212-1219
-
-
Coue, D.1
Wilson, G.2
-
19
-
-
0034295707
-
The fundamental limit on binary switching energy for Terascale Integration (TSI)
-
Oct.
-
J. D. Meindl and J. A. Davis, "The fundamental limit on binary switching energy for Terascale Integration (TSI), "IEEE J. Solid State Circuits, vol.35, no.10, pp. 1515-1516, Oct. 2000.
-
(2000)
IEEE J. Solid State Circuits
, vol.35
, Issue.10
, pp. 1515-1516
-
-
Meindl, J.D.1
Davis, J.A.2
-
20
-
-
46049098613
-
Carbon nanotubes: From growth, placement and assembly control to 60 mV/decade and sub-60 mV/decade tunnel transistors
-
Dec. 11-13
-
G. Zhang, X. Wang, X. Li, Y. Lu, A. Javey, and H. Dai, "Carbon nanotubes: From growth, placement and assembly control to 60 mV/decade and sub-60 mV/decade tunnel transistors, "in Int. Electron Devices Meeting, Dec. 11-13, 2006, pp. 1-4.
-
(2006)
Int. Electron Devices Meeting
, pp. 1-4
-
-
Zhang, G.1
Wang, X.2
Li, X.3
Lu, Y.4
Javey, A.5
Dai, H.6
-
21
-
-
0034863491
-
Ultra-low power DLMS adaptive filter for hearing aid applications
-
New York
-
C. H. Kim and K. Roy, "Ultra-low power DLMS adaptive filter for hearing aid applications, "in Proc. Int. Symp. Low Power Electronics and Design, New York, 2001, pp. 352-357.
-
(2001)
Proc. Int. Symp. Low Power Electronics and Design
, pp. 352-357
-
-
Kim, C.H.1
Roy, K.2
-
22
-
-
75649088724
-
-
[Online]
-
[Online]. Available: http://www.itrs.net/Links/2007ITRS/2007-Chapters/ 2007-PIDS.pdf
-
-
-
-
24
-
-
84889963793
-
Weak inversion for ultimate low power logic
-
C. Piquet, Ed. Boca Raton, FL: CRC
-
E. A. Vittoz, "Weak inversion for ultimate low power logic, "in Low Power Electronics Design, C. Piquet, Ed. Boca Raton, FL: CRC, 2004, pp. 16-3-16-7.
-
(2004)
Low Power Electronics Design
, pp. 163-167
-
-
Vittoz, E.A.1
-
25
-
-
33646871354
-
Moore's law: The future of Si microelectronics
-
Jun.
-
S. E. Thompson and S. Parthasarthy, "Moore's law: The future of Si microelectronics, "Mater. Today, vol.9, no.6, pp. 20-25, Jun. 2006.
-
(2006)
Mater. Today
, vol.9
, Issue.6
, pp. 20-25
-
-
Thompson, S.E.1
Parthasarthy, S.2
-
26
-
-
75649142725
-
Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs
-
May
-
J. P. Campbell, L. C. Yu, K. P. Cheung, J. Qin, J. S. Suehle, A. Oates, and K. Sheng, "Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs, "in Proc. IEEE Int. Conf. IC Design Technol., May 2009, pp. 17-20.
-
(2009)
Proc. IEEE Int. Conf. IC Design Technol.
, pp. 17-20
-
-
Campbell, J.P.1
Yu, L.C.2
Cheung, K.P.3
Qin, J.4
Suehle, J.S.5
Oates, A.6
Sheng, K.7
-
27
-
-
0002868708
-
1/f noise and germanium surface properties
-
R. H. Kingston, Ed. Philadelphia, PA: Univ. Pennsylvania Press
-
A. L. McWhorter, "1/f noise and germanium surface properties, "in Semiconductor Surface Physics, R. H. Kingston, Ed. Philadelphia, PA: Univ. Pennsylvania Press, 1957, pp. 207-208.
-
(1957)
Semiconductor Surface Physics
, pp. 207-208
-
-
McWhorter, A.L.1
-
28
-
-
64549133765
-
The origins of random telegraph noise in highly scaled SiON nMOSFETs
-
Oct.
-
J. P. Campbell, L. C. Yu, K. P. Cheung, J. Qin, J. S. Suehle, A. Oates, and K. Sheng, "The origins of random telegraph noise in highly scaled SiON nMOSFETs, "in Proc. IEEE Int. Integr. Rel. Workshop, Oct. 2008, pp. 105-109.
-
(2008)
Proc. IEEE Int. Integr. Rel. Workshop
, pp. 105-109
-
-
Campbell, J.P.1
Yu, L.C.2
Cheung, K.P.3
Qin, J.4
Suehle, J.S.5
Oates, A.6
Sheng, K.7
-
29
-
-
33947136855
-
Computing with sub-threshold leakage: Device/circuit/architecture co-design for ultralow power sub-threshold operation
-
Nov.
-
A. Raychowdhury, ". C. Paul, S. Bhunia, and K. Roy, "Computing with sub-threshold leakage: Device/circuit/architecture co-design for ultralow power sub-threshold operation, "IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 13, no. 11, pp. 1213-1224, Nov. 2005.
-
(2005)
IEEE Trans. Very Large Scale Integr. (VLSI) Syst.
, vol.13
, Issue.11
, pp. 1213-1224
-
-
Raychowdhury, A.1
Paul, C.2
Bhunia, S.3
Roy, K.4
-
30
-
-
75649152251
-
-
[Online]
-
[Online]. Available: http://www-mtl.mit.edu/Well
-
-
-
-
31
-
-
37749034552
-
Nanometer device scaling in sub-threshold logic and SRAM
-
Jan.
-
S. Hanson, M. Seok, D. Sylvester, and D. Blaauw, "Nanometer device scaling in sub-threshold logic and SRAM, "IEEE Trans. Electron Devices, vol.55, no.1, pp. 175-185, Jan. 2008.
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, Issue.1
, pp. 175-185
-
-
Hanson, S.1
Seok, M.2
Sylvester, D.3
Blaauw, D.4
-
32
-
-
67249128728
-
Compact models considering incomplete voltage swing in complementary metal oxide semiconductor circuits at ultralow voltages: A circuit perspective on limits of switching energy
-
May
-
S. K. Gupta, A. Raychowdhury, and K. Roy, "Compact models considering incomplete voltage swing in complementary metal oxide semiconductor circuits at ultralow voltages: A circuit perspective on limits of switching energy, "J. Appl. Phys, vol.105, no.9, May 2009.
-
(2009)
J. Appl. Phys
, vol.105
, Issue.9
-
-
Gupta, S.K.1
Raychowdhury, A.2
Roy, K.3
-
33
-
-
0015330654
-
BIon-implanted complementary MOS transistors in low-voltage circuits
-
Apr.
-
R. M. Swanson and J. D. Meindl, BIon-implanted complementary MOS transistors in low-voltage circuits, "IEEE J. Solid State Circuits, vol. SC-7, no. 2, pp. 146-153, Apr. 1972.
-
(1972)
IEEE J. Solid State Circuits
, vol.SC-7
, Issue.2
, pp. 146-153
-
-
Swanson, R.M.1
Meindl, J.D.2
-
35
-
-
0033882752
-
A general approach to compact threshold voltage formulation based on 2-D numerical simulation and experimental correlation for deep-submicron ULSI technology development
-
Jan.
-
X. Zhou, K. Y. Lim, and D. Lim, "A general approach to compact threshold voltage formulation based on 2-D numerical simulation and experimental correlation for deep-submicron ULSI technology development, "IEEE Trans. Electron Devices, vol.47, pp. 214-221, Jan. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 214-221
-
-
Zhou, X.1
Lim, K.Y.2
Lim, D.3
-
36
-
-
34347237842
-
Utilizing reverse short-channel effect for optimal sub-threshold circuit design
-
Jul.
-
T.-H. Kim, J. Keane, H. Eom, and C. H. Kim, "Utilizing reverse short-channel effect for optimal sub-threshold circuit design, " IEEE Trans. Very Large Scale Integr.(VLSI) Syst., vol.15, no.7, pp. 821-829, Jul. 2007.
-
(2007)
IEEE Trans. Very Large Scale Integr.(VLSI) Syst.
, vol.15
, Issue.7
, pp. 821-829
-
-
Kim, T.-H.1
Keane, J.2
Eom, H.3
Kim, C.H.4
-
37
-
-
0042532317
-
Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
-
May
-
A. Asenov, S. Kaya, and A. R. Brown, "Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness, "IEEE Trans. Electron Devices, vol.50, no.5, pp. 1254-1260, May 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.5
, pp. 1254-1260
-
-
Asenov, A.1
Kaya, S.2
Brown, A.R.3
-
38
-
-
4444275443
-
Double gate-MOSFET sub-threshold circuit for ultralow power applications
-
Sep.
-
J. Kim and K. Roy, "Double gate-MOSFET sub-threshold circuit for ultralow power applications, "IEEE Trans. Electron Devices, vol.51, no.9, pp. 1468-1474, Sep. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.9
, pp. 1468-1474
-
-
Kim, J.1
Roy, K.2
-
39
-
-
0036564015
-
Speed superiority of scaled double gate CMOS
-
May
-
J. G. Fossum, L. Ge, and M.-H. Chiang, "Speed superiority of scaled double gate CMOS, "IEEE Trans. Electron Devices, vol.49, pp. 808-811, May 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 808-811
-
-
Fossum, J.G.1
Ge, L.2
Chiang, M.-H.3
-
40
-
-
16244415208
-
Characterizing and modeling minimum energy operation for subthreshold circuits
-
Aug.
-
B. H. Calhoun and A. P. Chandrakasan, "Characterizing and modeling minimum energy operation for subthreshold circuits, "in Proc. Int. Symp. Low Power Electron. Design, Aug. 2004, pp. 90-95.
-
(2004)
Proc. Int. Symp. Low Power Electron. Design
, pp. 90-95
-
-
Calhoun, B.H.1
Chandrakasan, A.P.2
-
41
-
-
2342557097
-
Optimal supply and threshold scaling for sub-threshold CMOS circuits
-
A. Wang, A. P. Chandrakasan, and S. V. Kosonocky, "Optimal supply and threshold scaling for sub-threshold CMOS circuits, "in Proc. IEEE Comput. Soc. Annu. Symp. VLSI, 2002, pp. 5-9.
-
(2002)
Proc. IEEE Comput. Soc. Annu. Symp. VLSI
, pp. 5-9
-
-
Wang, A.1
Chandrakasan, A.P.2
Kosonocky, S.V.3
-
42
-
-
51949107763
-
The phoenix processor: A 30 pW platform for sensor applications
-
Jun. 18-20
-
M. Seok, S. Hanson, Y.-S. Lin, Z. Foo, D. Kim, Y. Lee, N. Liu, D. Sylvester, and D. Blaauw, "The phoenix processor: A 30 pW platform for sensor applications, "in Symp. VLSI Circuits Dig. Tech. Papers, Jun. 18-20, 2008, pp. 188-189.
-
(2008)
Symp. VLSI Circuits Dig. Tech. Papers
, pp. 188-189
-
-
Seok, M.1
Hanson, S.2
Lin, Y.-S.3
Foo, Z.4
Kim, D.5
Lee, Y.6
Liu, N.7
Sylvester, D.8
Blaauw, D.9
-
43
-
-
52049084842
-
Process tolerant ultralow voltage digital sub-threshold design
-
Jan.
-
K. Roy, J. P. Kulkarni, and M.-E. Hwang, "Process tolerant ultralow voltage digital sub-threshold design, "in Proc. IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst., Jan. 2008, pp. 42-45.
-
(2008)
Proc. IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst.
, pp. 42-45
-
-
Roy, K.1
Kulkarni, J.P.2
Hwang, M.-E.3
-
44
-
-
51749121207
-
Circuit techniques for ultra-low power sub-threshold SRAMs
-
May
-
T.-H. Kim, J. Liu, J. Keane, and C. H. Kim, "Circuit techniques for ultra-low power sub-threshold SRAMs, "in Proc. IEEE Int. Symp. Circuits Syst., May 2008, pp. 2574-2577.
-
(2008)
Proc. IEEE Int. Symp. Circuits Syst.
, pp. 2574-2577
-
-
Kim, T.-H.1
Liu, J.2
Keane, J.3
Kim, C.H.4
-
45
-
-
57849151111
-
An 8-T sub-threshold SRAM cell utilizing reverse short channel effect for write margin and read performance improvement
-
T.-H. Kim, J. Liu, and C. H. Kim, "An 8-T sub-threshold SRAM cell utilizing reverse short channel effect for write margin and read performance improvement, "in Proc. IEEE Custom Integr. Circuits Conf., 2007, pp. 241-244.
-
(2007)
Proc. IEEE Custom Integr. Circuits Conf.
, pp. 241-244
-
-
Kim, T.-H.1
Liu, J.2
Kim, C.H.3
-
46
-
-
85008054031
-
A 256 kb 65 nm 8 T sub-threshold SRAM employing sense-amplifier redudancy
-
Jan.
-
N. Verma and A. P. Chandrakasan, "A 256 kb 65 nm 8 T sub-threshold SRAM employing sense-amplifier redudancy, "IEEE J. Solid State Circuits, vol.43, no.1, pp. 141-149, Jan. 2008.
-
(2008)
IEEE J. Solid State Circuits
, vol.43
, Issue.1
, pp. 141-149
-
-
Verma, N.1
Chandrakasan, A.P.2
-
47
-
-
0031635212
-
A new technique for standby leakage reduction in high performance circuits
-
Jun.
-
Y. Ye, S. Borkar, and V. De, "A new technique for standby leakage reduction in high performance circuits, "in Proc. IEEE Symp. VLSI Circuits, Jun. 1998, pp. 40-41.
-
(1998)
Proc. IEEE Symp. VLSI Circuits
, pp. 40-41
-
-
Ye, Y.1
Borkar, S.2
De, V.3
-
48
-
-
34748830993
-
A 160 mV robust schmitt trigger based subthreshold SRAM
-
Oct.
-
J. P. Kulkarni, K. Kim, and K. Roy, "A 160 mV robust schmitt trigger based subthreshold SRAM, "IEEE J. Solid-State Circuits, vol.42, no.10, pp. 2303-2313, Oct. 2007.
-
(2007)
IEEE J. Solid-State Circuits
, vol.42
, Issue.10
, pp. 2303-2313
-
-
Kulkarni, J.P.1
Kim, K.2
Roy, K.3
-
49
-
-
51549097605
-
Process variation tolerant SRAM for ultra-low voltage applications
-
Jun.
-
J. P. Kulkarni, K. Kim, S. P. Park, and K. Roy, "Process variation tolerant SRAM for ultra-low voltage applications, "in Proc. Design Autom. Conf., Jun. 2008, pp. 108-113.
-
(2008)
Proc. Design Autom. Conf.
, pp. 108-113
-
-
Kulkarni, J.P.1
Kim, K.2
Park, S.P.3
Roy, K.4
-
50
-
-
49549103577
-
A 32 kb 10 T sub-threshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS
-
I. J. Chang, J.-J. Kim, S. P. Park, and K. Roy, "A 32 kb 10 T sub-threshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS, "in Proc. IEEE Int. Solid State Circuits Conf., 2008, pp. 387-389.
-
(2008)
Proc. IEEE Int. Solid State Circuits Conf.
, pp. 387-389
-
-
Chang, I.J.1
Kim, J.-J.2
Park, S.P.3
Roy, K.4
-
51
-
-
19744366972
-
Band-to-band tunneling in carbon nanotube field-effect transistors
-
J. Appenzellar, Y.-M. Lin, J. Knoch, and P. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors, "Phys. Rev. Lett., vol.93, p. 196 805, 2004.
-
(2004)
Phys. Rev. Lett.
, vol.93
, Issue.805
, pp. 196
-
-
Appenzellar, J.1
Lin, Y.-M.2
Knoch, J.3
Avouris, P.4
-
52
-
-
4544248640
-
Complementary tunneling transistor for low power application
-
P.-F. Wang, K. Hilsenback, T. Nirschl, M. Oswald, C. Stepper, M. Weis, D. Schmitt-Landsiedel, and W. Hansch, "Complementary tunneling transistor for low power application, "Solid State Electron., vol.48, no.12, pp. 2281-2286.
-
Solid State Electron.
, vol.48
, Issue.12
, pp. 2281-2286
-
-
Wang, P.-F.1
Hilsenback, K.2
Nirschl, T.3
Oswald, M.4
Stepper, C.5
Weis, M.6
Schmitt-Landsiedel, D.7
Hansch, W.8
-
53
-
-
34247235625
-
Analysis of super cut-off transistors for ultralow power digital logic circuits
-
DOI 10.1145/1165573.1165577, ISLPED'06 - Proceedings of the 2006 International Symposium on Low Power Electronics and Design
-
A. Raychowdhury, X. Fong, Q. Chen, and K. Roy, "Analysis of super cut-off transistors for ultralow power digital logic circuits, "in Proc. Int. Symp. Low Power Electron. Design, Oct. 2006, pp. 2-7. (Pubitemid 46613752)
-
(2006)
Proceedings of the International Symposium on Low Power Electronics and Design
, vol.2006
, pp. 2-7
-
-
Raychowdhury, A.1
Xuanyao, F.2
Qikai, C.3
Roy, K.4
-
54
-
-
9744264882
-
Quantum capacitance in nanoscale device modeling
-
Nov.
-
D. L. John, L. C. Castro, and D. L. Pulfrey, "Quantum capacitance in nanoscale device modeling, "J. Appl. Phys., vol.96, no.9, pp. 5180-5184, Nov. 2004.
-
(2004)
J. Appl. Phys.
, vol.96
, Issue.9
, pp. 5180-5184
-
-
John, D.L.1
Castro, L.C.2
Pulfrey, D.L.3
-
55
-
-
34548849771
-
Leakage-based on chip thermal sensor for CMOS technology
-
P. Ituero, J. L. Ayala, and M. Vallejo Lopez, "Leakage-based on chip thermal sensor for CMOS technology, "in Proc. IEEE Int. Symp. Circuits Syst., 2007, pp. 3327-3330.
-
(2007)
Proc. IEEE Int. Symp. Circuits Syst.
, pp. 3327-3330
-
-
Ituero, P.1
Ayala, J.L.2
Vallejo Lopez, M.3
-
56
-
-
49549104682
-
Compact in-situ sensors for monitoring negative bias temperature instability effect and oxide degradation
-
E. Karl, P. Singh, D. Blaauw, and D. Sylvester, "Compact in-situ sensors for monitoring negative bias temperature instability effect and oxide degradation, "in Proc. IEEE Int. Solid State Circuits Conf., 2008, pp. 410-411.
-
(2008)
Proc. IEEE Int. Solid State Circuits Conf.
, pp. 410-411
-
-
Karl, E.1
Singh, P.2
Blaauw, D.3
Sylvester, D.4
|