The origins of random telegraph noise in highly scaled SiON nMOSFETs

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2008, Pages 105-109

  Campbell, J P ^a   Qin, J ^a,b   Cheung, K P ^a   Yu, L ^a,c   Suehle, J S ^a   Oates, A ^d   Sheng, K ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; DEFECTS; GATE DIELECTRICS; MOSFET DEVICES; SILICON COMPOUNDS;

BULK OXIDES; CHARGE-EXCHANGE; CIRCUIT PERFORMANCE; DIELECTRIC DEFECTS; GATE OXIDE THICKNESS; INVERSION CHARGE; NMOSFETS; NOISE BEHAVIOR; OXIDE DEFECTS; RANDOM TELEGRAPH NOISE;

INTERFACE STATES;

EID: 64549133765     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2008.4796097     Document Type: Conference Paper

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