Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors

Electronics Letters

Volumn 32, Issue 8, 1996, Pages 767-769

  Jomaah, J ^a   Ghibaudo, G ^a   Balestra, F ^a  

^a Grenoble INP Phelma   (France)

Author keywords

MOSFETs; Semiconductor device models

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; TRANSPARENCY;

FIXED GATE VOLTAGE; GATE INDUCED DRAIN LEAKAGE CURRENTS; GATE TO DRAIN VOLTAGE; PLANCK CONSTANT; SEMICONDUCTOR CHARGE; WENZEL-KRAMERS-BRILLOUIN APPROXIMATION;

MOSFET DEVICES;

EID: 0030129137     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960538     Document Type: Article

References (8)

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2. CHAN, T.Y., CHEN, J., KO, P.K., and HU, C.: 'The impact of gate induced drain leakage current on MOSFET scaling'. IEDM Tech. Dig., IEEE, 1987, pp. 718-721
3. KURIMOTO, K., ODAKE, Y., and ODANAKA, S.: 'Drain leakage current characteristics due to band-to-band tunnelling in LDD MOS devices'. IEDM Tech. Dig., IEEE, 1989, pp. 621-624
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7. TANAKA, S.: 'Theory of drain leakage current in Silicon MOSFETs', Sol. State Electron., 1995, 38, (3), pp. 683-691
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