Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Zhang, Guangyu ^a   Wang, Xinran ^a   Li, Xiaolin ^a   Lu, Yuerui ^a   Javey, Ali ^a   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; OPTICAL DESIGN; OXIDE MINERALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; SINGLE CRYSTALS; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS; TUNNELS;

AMBIPOLAR; FIELD EFFECTS; LANGMUIR; NANO TUBE; ORIENTATION CONTROL; RECENT PROGRESS; SINGLE CRYSTAL QUARTZ; SINGLE-WALLED CARBON NANOTUBES; SUB THRESHOLDS; TUNNEL TRANSISTORS;

CARBON NANOTUBES;

EID: 46049098613     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346804     Document Type: Conference Paper

References (17)

1. J. Kong, H. Soh, A. Cassell, et al., Nature 395, 878 (1998).
2. A. Javey and H. Dai, J. Am. Chem. Soc. 127, 11942 (2005).
3. Y. Zhang, et al., Appl. Phys. Lett. 79, 3155 (2001).
4. A. Ural, Y. Li, and H. Dai, Appl. Phys. Lett. 81, 3464 (2002).
5. S. Han, X. Liu, and C. Zhou, J. Am. Chem. Soc. 127, 5294 (2005).
6. M. S. C. Coskuns, J. Rogers, J. Am. Chem. Soc. 127, 567 (2006).
7. G. Y. Zhang, et al., PNAS 102, 16141 (2005).
8. Y. M. Li, et al., Nano Lett. 4, 317-321 (2004).
9. W. Kim, A. Javey, R. Tu, et al., Appl Phys Lett 87, 1 (2005).
10. A. Ulman, An Introduction to Ultrathin Organic Films: From Langmuir-blodgett to Self-Assembly; academic Press: Boston, 1991.
11. See F. Kim, S, Kwan, J, Akana, P. D. Yang, J. Am. Chem. Soc., 123, 4360 (2001);
12. D. Whang, S. Jin, Y. Wu, C. M. Lieber, Nano Lett. 3, 1255 (2003);
13. S. Jin, D. Whang, M. C. McAlpine, R. S. Friedman, Y. Wu, C. M. Lieber, Nano Lett. 4, 915 (2004).
14. Y. Lu et al., J. Am. Chem. Soc. 128, 3518 (2006).
15. J. Appenzeller, et al., IEEE Trans. Elec. Dev. 52, 2568 (2005).
16. S. Koswatta et al., IEDM 518 (2005).
17. S. Koswatta et al., Appl. Phys. Lett. 87, 253107 (2005).