Impact of gate direct tunneling current on circuit performance: A simulation study

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2823-2829

  Choi, Chang Hoon ^a,b   Nam, Ki Young ^a,b   Yu, Zhiping ^a,b   Dutton, Robert W ^a,b  

^a IEEE   (United States)

^b Stanford University   (United States)

Author keywords

Circuit simulation; CMOS inverters; Device simulation; Gate direct tunneling; Static and dynamic circuits; Thin gate oxide

Indexed keywords

GATE DIRECT TUNNELING; THIN GATE OXIDES;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS;

MOS DEVICES;

EID: 0035694264     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974710     Document Type: Article

References (8)

1. 1.5-nm direct-tunneling gate oxide Si MOSFETs
2. Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs
3. A comparative study of gate direct tunneling and drain leakage currents in N-MOSFETs with sub-2100-nm gate oxides
4. Extraction of the gate oxide thickness of N- and P-channel MOSFETs below 20 Å from substrate current resulting from valence-band electron tunneling