SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8354-8359

High-absorption resist process for extreme ultraviolet lithography

(2) Kozawa, Takahiro a Tagawa, Seiichi a

a OSAKA UNIVERSITY (Japan)

Author keywords

Absorption coefficient; Aerial image; Chemically amplified resist; EUV lithography; Latent image

Indexed keywords

ABSORPTION; ACIDS; COMMERCE; EXTREME ULTRAVIOLET LITHOGRAPHY; IMAGE QUALITY; LASER PULSES; LITHOGRAPHY; MULTIPHOTON PROCESSES; PHOTORESISTORS; ROUGHNESS MEASUREMENT; ULTRAVIOLET DEVICES; WALL FLOW;

ABSORPTION COEFFICIENT; AERIAL IMAGE; CHEMICALLY AMPLIFIED RESIST; EUV LITHOGRAPHY; LATENT IMAGE;

PHOTORESISTS;

EID: 58749086909 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.8354 Document Type: Article

Times cited : (24)

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