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Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4465-4468

Feasibility study of chemically amplified extreme ultraviolet resists for 22 nm fabrication

(5) Kozawa, Takahiro a Tagawa, Seiichi a Santillan, Julius Joseph b Toriumi, Minoru b Itani, Toshiro b

a OSAKA UNIVERSITY (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

Chemically amplified resist; EUV lithography; Feasibility study; Resolution; Sensitivity

Indexed keywords

ABS RESINS; ABSORPTION; ACIDS; AMPLIFICATION; CATALYSIS; CHEMICAL REACTIONS; DECISION MAKING; ELECTRON BEAM LITHOGRAPHY; GRAFTING (CHEMICAL); IMAGE ENHANCEMENT; PHOTORESISTORS; PLANNING; QUALITY CONTROL; RATE CONSTANTS; RESOURCE ALLOCATION; SYNTHESIS (CHEMICAL); ULTRAVIOLET DEVICES;

CHEMICALLY AMPLIFIED RESIST; EUV LITHOGRAPHY; FEASIBILITY STUDY; RESOLUTION; SENSITIVITY;

PHOTORESISTS;

EID: 55049132558 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.4465 Document Type: Article

Times cited : (25)

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