Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 3149-3152

  Kozawa, Takahiro ^a   Saeki, Akinori ^a   Nakano, Atsuro ^a   Yoshida, Yoichi ^a   Tagawa, Seiichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; DIFFUSION; IONIZATION; LASERS; LITHOGRAPHY; NEGATIVE IONS; POLYMETHYL METHACRYLATES; PROTONS;

POSTEXPOSURE BAKE (PEB); THERMAL ENERGY LEVEL;

ELECTRON BEAM LITHOGRAPHY;

EID: 0942289187     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1619959     Document Type: Conference Paper

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