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Volumn 45, Issue 9 A, 2006, Pages 6866-6871
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Acid generation mechanism of poly(4-hydroxystyrene)-based chemically amplified resists for post-optical lithography: Acid yield and deprotonation behavior of poly(4-hydroxystyrene) and poly(4-methoxystyrene)
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Author keywords
Acid generation mechanism; Deprotonation; Electron beam; EUV; Poly(4 hydroxystyrene)
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Indexed keywords
ELECTRON BEAM LITHOGRAPHY;
ELECTRON BEAMS;
IONIZING RADIATION;
OPTICAL RESOLVING POWER;
PHOTOLITHOGRAPHY;
PROTONS;
ACID GENERATION MECHANISM;
DEPROTONATION;
POLY(4-HYDROXYSTYRENE);
POLY(4-METHOXYSTYRENE);
POLYSTYRENES;
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EID: 33749015984
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.45.6866 Document Type: Article |
Times cited : (72)
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References (57)
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