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Volumn 45, Issue 9 A, 2006, Pages 6866-6871

Acid generation mechanism of poly(4-hydroxystyrene)-based chemically amplified resists for post-optical lithography: Acid yield and deprotonation behavior of poly(4-hydroxystyrene) and poly(4-methoxystyrene)

Author keywords

Acid generation mechanism; Deprotonation; Electron beam; EUV; Poly(4 hydroxystyrene)

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; IONIZING RADIATION; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY; PROTONS;

EID: 33749015984     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6866     Document Type: Article
Times cited : (72)

References (57)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.