메뉴 건너뛰기




Volumn 5376, Issue PART 1, 2004, Pages 414-425

Characterization of line edge roughness in photoresist using an image fading technique

Author keywords

Aerial image contrast; Image log slope (ILS); Intrinsic bias; Line edge roughness (LER); Photoresist; Resist edge log slope (RELS)

Indexed keywords

APPROXIMATION THEORY; DISSOLUTION; DOSIMETRY; IMAGE ANALYSIS; LIGHTING; MACROMOLECULES; POLYMERS; SPURIOUS SIGNAL NOISE;

EID: 3843151399     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537103     Document Type: Conference Paper
Times cited : (87)

References (35)
  • 7
    • 0034317711 scopus 로고    scopus 로고
    • Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method
    • M. Yoshizawa and S. Moriya, "Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method," Journal of Vacuum Science & Technology B, vol. 18, pp. 3105-3110, 2000.
    • (2000) Journal of Vacuum Science & Technology B , vol.18 , pp. 3105-3110
    • Yoshizawa, M.1    Moriya, S.2
  • 9
    • 0942267513 scopus 로고    scopus 로고
    • Line edge roughness of sub-100nm dense and isolated features: Experimental study
    • Y. Ma, G. Tsvid, and F. Cerrina, "Line edge roughness of sub-100nm dense and isolated features: experimental study," Journal of Vacuum Science & Technology B, vol. 21, pp. 3124-3130, 2003.
    • (2003) Journal of Vacuum Science & Technology B , vol.21 , pp. 3124-3130
    • Ma, Y.1    Tsvid, G.2    Cerrina, F.3
  • 11
    • 0037159289 scopus 로고    scopus 로고
    • Kinetic model for positive tone resist dissolution and roughening
    • F. A. Houle, W. Hinsberg, and M. I. Sanchez, "Kinetic model for positive tone resist dissolution and roughening," Macromolecules, vol. 35, pp. 8591-8600, 2002.
    • (2002) Macromolecules , vol.35 , pp. 8591-8600
    • Houle, F.A.1    Hinsberg, W.2    Sanchez, M.I.3
  • 16
    • 0036883189 scopus 로고    scopus 로고
    • Depth dependence of resist line-edge roughness: Relation to photoacid diffusion length
    • J. Shin, Y. Ma, and F. Cerrina, "Depth dependence of resist line-edge roughness: relation to photoacid diffusion length," Journal of Vacuum Science & Technology B, vol. 20, pp. 2927-2931, 2002.
    • (2002) Journal of Vacuum Science & Technology B , vol.20 , pp. 2927-2931
    • Shin, J.1    Ma, Y.2    Cerrina, F.3
  • 18
    • 0033690380 scopus 로고    scopus 로고
    • Toward controlled resist lines edge roughness: Material origin of line edge roughness in chemically amplified positive-tone resists
    • Q. Lin, R. Sooriyakumaran, and W.-S. Huang, "Toward controlled resist lines edge roughness: material origin of line edge roughness in chemically amplified positive-tone resists," Proceedings of SPIE-The International Society for Optical Engineering, vol. 3999, pp. 230-239, 2000.
    • (2000) Proceedings of SPIE-The International Society for Optical Engineering , vol.3999 , pp. 230-239
    • Lin, Q.1    Sooriyakumaran, R.2    Huang, W.-S.3
  • 20
    • 0001013074 scopus 로고    scopus 로고
    • Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films
    • T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki, and K. Kurihara, "Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films," Applied Physics Letters, vol. 71, pp. 2388-2390, 1997.
    • (1997) Applied Physics Letters , vol.71 , pp. 2388-2390
    • Yamaguchi, T.1    Namatsu, H.2    Nagase, M.3    Yamazaki, K.4    Kurihara, K.5
  • 23
    • 3843108377 scopus 로고    scopus 로고
    • note
    • Please note that the definition of asymmetric magnification error may vary for different exposure tools. The definition used in this work considers only changes in the magnification in the scan direction as acheived by adjusting the relative scan speeds of the reticle and wafer stages.
  • 26
    • 0030714729 scopus 로고    scopus 로고
    • Impact of lens aberrations on optical lithography
    • T. A. Brunner, "Impact of lens aberrations on optical lithography," IBM Journal of Research and Development, vol. 41, pp. 57-67, 1997.
    • (1997) IBM Journal of Research and Development , vol.41 , pp. 57-67
    • Brunner, T.A.1
  • 27
    • 0000863425 scopus 로고    scopus 로고
    • Process dependence of roughness in a positive-tone chemically amplified resist
    • D. He and F. Cerrina, "Process dependence of roughness in a positive-tone chemically amplified resist," Journal of Vacuum Science & Technology B, vol. 16, pp. 3748-3751, 1999.
    • (1999) Journal of Vacuum Science & Technology B , vol.16 , pp. 3748-3751
    • He, D.1    Cerrina, F.2
  • 30
    • 24644487409 scopus 로고    scopus 로고
    • Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by xray lithography
    • G. W. Reynolds and J. W. Taylor, "Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by xray lithography, " Journal of Vacuum Science & Technology B, vol. 17, pp. 334-344, 1999.
    • (1999) Journal of Vacuum Science & Technology B , vol.17 , pp. 334-344
    • Reynolds, G.W.1    Taylor, J.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.