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3843108377
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-
note
-
Please note that the definition of asymmetric magnification error may vary for different exposure tools. The definition used in this work considers only changes in the magnification in the scan direction as acheived by adjusting the relative scan speeds of the reticle and wafer stages.
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26
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Photospeed considerations for extreme ultraviolet lithography resists
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Study of resolution limits due to intrinsic bias in chemically amplified photoresists
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Resists for next generation lithography
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0141613024
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Effect of polymer molecular weight on AFM polymer aggregate size and LER of EUV resists
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Diffusion induced line edge roughness
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Stewart, M.D.1
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