Protonation sites in chemically amplified resists for electron-beam lithography

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 46-50, 2006, Pages

  Natsuda, Kenichiro ^a   Kozawa, Takahiro ^a   Okamoto, Kazumasa ^a   Tagawa, Seiichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Amine; Base quencher; Chemically amplified resist; Proton affinity; Protonation

Indexed keywords

AMINES; CATALYSIS; ELECTRIC CHARGE; ELECTRON BEAM LITHOGRAPHY; IMAGE QUALITY;

ACID DIFFUSION; BASE QUENCHER; CHEMICALLY AMPLIFIED RESIST; PROTON AFFINITY;

PROTONATION;

EID: 34547880767     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1256     Document Type: Article

References (25)

1. T. Kozawa, A. Saeki, A. Nakano, Y. Yoshida and S. Tagawa: J. Vac. Sci. Technol. B 21 (2003) 3149.
2. T. Kozawa, Y. Yoshida, M. Uesaka and S. Tagawa: Jpn. J. Appl. Phys. 31 (1992) 4301.
3. A. Nakano, T. Kozawa, S. Tagawa, T. Szreder, J. F. Wishart, T. Kai and T. Shimokawa: Jpn. J. Appl. Phys. 45 (2006) L197.
4. T. Kozawa, S. Nagahara, Y. Yoshida and S. Tagawa: J. Vac. Sci. Technol. B 15 (1997) 2582.
5. A. Nakano, T. Kozawa, K. Okamoto, S. Tagawa, T. Kai and T. Shimokawa: Jpn. J. Appl. Phys. 45 (2006) 6866.
6. T. Kozawa and S. Tagawa: J. Appl. Phys. 99 (2006) 054509.
7. T. Kozawa, A. Saeki and S. Tagawa: J. Vac. Sci. Technol. B 22 (2004) 3489.
8. T. Kozawa, H. Yamamoto, A. Saeki and S. Tagawa: J. Vac. Sci. Technol. B 23 (2005) 2716.
9. A. Saeki, T. Kozawa, S. Tagawa and H. B. Cao: Nanotechnology 17 (2006) 1543.
10. W. D. Hinsberg, F. A. Houle, M. I. Sanchez, M. Morrison, G. M. Wallraff, C. Larson, J. Hoffnagle, P. Brock, and G. Beryta: Proc. SPIE 3999 (2000) 148.
11. T. Ushirogouchi, K. Asakawa, M. Nakase and A. Hongu: Proc. SPIE 2438 (1995) 609.
12. T. B. Michaelson, A. R. Pawloski, A. Acheta, Y. Nishimura and C. G. Willson: Proc. SPIE 5753 (2005) 368.
13. Y. Kawai, A. Otaka, A. Tanaka and T. Matsuda: Jpn. J. Appl. Phys. 33 (1994) 7023.
14. K. Asakawa, T. Ushirogouchi and M. Nakase: Proc. SPIE 2438 (1995) 563.
15. J. Nakamura, H. Ban and A. Tanaka: ACS Symp. Ser. 614 (1995) 69.
16. X. Shi: J. Vac. Sci. Technol. B 17 (1999) 350.
17. W. D. Hinsberg, F. A. Houle, M. I. Sanchez and G. M. Wallraff: IBM J. Res. Dev. 45 (2001) 667.
18. S. G. Lias, J. F. Liebman and R. D. Levin: J. Phys. Chem. Ref. Data 13 (1984) 695.
19. E. S. E. van Beelen, T. A. Koblenz, S. Ingemann and S. Hammerum: J. Phys. Chem. A 108 (2004) 2787.
20. G. Pohler, J. C. Scaiano and R. Sinta: Chem. Mater. 9 (1997) 3222.
21. C. Coenjarts, J. Cameron, G. Pohlers, J. C. Scaiano and A. Zampini: J. Appl. Polym. Sci. 78 (2000) 1897.
22. H. Yamamoto, A. Nakano, K. Okamoto, T. Kozawa and S. Tagawa: Jpn. J. Appl. Phys. 43 (2004) 3971.
23. H. Yamamoto, T. Kozawa, A. Nakano, K. Okamoto, Y. Yamamoto, T. Ando, M. Sato, H. Romano and S. Tagawa: Jpn. J. Appl. Phys. 43 (2004) L848.
24. C. R. Szmanda, R. Kavanagh, J. Bohland, J. Cameron, P. Trefonas and R. Blacksmith: Proc. SPIE 3678 (1999) 857.
25. A. R. Pawloski, Christian and P. F. Nealey: Chem. Mater. 13 (2001) 4154.