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Journal of Photopolymer Science and Technology

Volumn 20, Issue 3, 2007, Pages 423-428

Progress in EUV resist development

(8) Shimizu, Daisuke a Maruyama, Ken a Saitou, Akio a Kai, Toshiyuki a Shimokawa, Tsutomu a Fujiwara, Koichi b Kikuchi, Yukiko a Nishiyama, Iwao c

a JSR CORPORATION (Japan)

b JSR Micro (United States)

c ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET (Japan)

Author keywords

Chemically amplified resist; Extreme ultraviolet (EUV) lithography; Line width roughness (LWR); Molecular glass

Indexed keywords

EID: 36148983500 PISSN: 09149244 EISSN: 13496336 Source Type: Journal
DOI: 10.2494/photopolymer.20.423 Document Type: Article

Times cited : (52)

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