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Volumn 20, Issue 3, 2007, Pages 383-392

Status of EUV lithography at IMEC

Author keywords

Defect printability; EUV lithography; EUV resists; EUV reticles; Flare mitigation; Interference lithography; Shadowing effect

Indexed keywords


EID: 36148965873     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.20.383     Document Type: Article
Times cited : (20)

References (19)
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    • Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future, EMLC, Grenoble
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    • R. Jonckheere et al, "Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future", EMLC, Grenoble, (2007), in press
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  • 9
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    • Chandhok, et al. US patent 7,022,443 (2006); J. Rau, US patent 6,707,123 (2004) , S. Schwarzl US patent 6,872,495 (2005), M. Lowisch, et al. US patent 7,042,550 (2006).
    • Chandhok, et al. US patent 7,022,443 (2006); J. Rau, US patent 6,707,123 (2004) , S. Schwarzl US patent 6,872,495 (2005), M. Lowisch, et al. US patent 7,042,550 (2006).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.