Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 6, Issue 4, 2007, Pages

  Saeki, Akinori ^a   Kozawa, Takahiro ^a   Tagawa, Seiichi ^a   Cao, Heidi B ^b   Deng, Hai ^b   Leeson, Michael J ^b  

^a OSAKA UNIVERSITY   (Japan)

^b INTEL CORPORATION   (United States)

Author keywords

Diffusion; Electron beams; Lithography; Radiation chemistry; Simulations

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRON BEAMS; LITHOGRAPHY; MONTE CARLO METHODS;

AMINE CONCENTRATION; EXPOSURE DOSE; POST-OPTICAL LITHOGRAPHIES;

RADIATION CHEMISTRY;

EID: 37549067736     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2792178     Document Type: Article

References (25)

1. H. Ito, and C. G. Willson, " Chemical amplification in the design of dry developing resist materials., " Polym. Eng. Sci. 23, 1012 (1983).
2. H. Ito, " Chemical amplification resists for microlithography., " Adv. Polym. Sci. 172, 37 (2005).
3. 2005 International Technology Roadmap for Semiconductors (see http://public.itrs.net).
4. G. M. Schmid, M. D. Smith, C. A. Mack, V. K. Singh, S. D. Burns, and C. G. Willson, " Understanding molecular-level effects during post-exposure processing., " Proc. SPIE 4345, 1037-1047 (2001).
5. H. Cao, W. Yueh, B. Rice, J. Roberts, T. Bacuita, and M. Chandhok, " Sources of line-width roughness for EUV resists., " Proc. SPIE 5376, 757-764 (2004).
6. W. D. Hinsberg, F. A. Houle, M. I. Sanchez, and G. M. Wallraff, " Chemical and physical aspects of the post-exposure baking process used for positive-tone chemically amplified resists., " IBM J. Res. Dev. 45, 667 (2001).
7. G. W. Reynolds, and J. W. Taylor, " Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography., " J. Vac. Sci. Technol. B B17, 334 (1999).
8. T. Yamaguchi, K. Yamazaki, M. Nagase, and H. Namatsu, " Line-edge roughness: characterization and material origin., " Jpn. J. Appl. Phys., Part 1 42, 3755 (2003).
9. T. Kozawa, Y. Yoshida, M. Uesaka, and S. Tagawa, " Radiation-induced acid generation reactions in chemically amplified resists for electron beam and x-ray lithography., " Jpn. J. Appl. Phys., Part 1 31, 4301 (1992).
10. A. Saeki, T. Kozawa, Y. Yoshida, and S. Tagawa, " Study on radiation-induced reaction in microscopic region for basic understanding of electron beam patterning in lithographic process (II): relation between resist space resolution and space distribution of ionic species., " Jpn. J. Appl. Phys., Part 1 41, 4213 (2002).
11. S. Tsuji, T. Kozawa, Y. Yamamoto, and S. Tagawa, " Studies on reaction mechanisms of EB resist by pulse radiolysis., " J. Photopolym. Sci. Technol. 13, 733 (2000).
12. A. Nakano, T. Kozawa, S. Tagawa, J. F. Wishart, T. Kai, and T. Shimokawa, " Reactivity of acid generators for chemically amplified resists with low-energy electrons., " Jpn. J. Appl. Phys., Part 1 45, L197 (2006).
13. T. Kozawa, S. Nagahara, Y. Yashida, S. Tagawa, T. Watanabe, and Y. Yamashita, " Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of t-butoxycarbonyl groups., " J. Vac. Sci. Technol. B B15, 2582 (1997).
14. T. Kozawa, A. Saeki, A. Nakano, Y. Yoshida, and S. Tagawa, " Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography., " J. Vac. Sci. Technol. B B21, 3149 (2003).
15. T. Kozawa, H. Yamamoto, A. Saeki, and S. Tagawa, " Proton and anion distribution and line edge roughness of chemically amplified electron beam resist., " J. Vac. Sci. Technol. B B23, 2716 (2005).
16. T. Kozawa, A. Saeki, and S. Tagawa, " Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes., " J. Vac. Sci. Technol. B B22, 3489 (2004).
17. A. Saeki, T. Kozawa, S. Tagawa, and H. B. Cao, " Line edge roughness of a latent image in post-optical lithography., " Nanotechnology 17, 1543 (2006).
18. A. Saeki, T. Kozawa, Y. Yoshida, and S. Tagawa, " Multi spur effect on decay kinetics of geminate ion recombination using Monte Carlo technique., " Nucl. Instrum. Methods Phys. Res. A B234, 285 (2005).
19. H. Yamamoto, T. Kozawa, A. Nakano, K. Okamoto, Y. Yamamoto, T. Ando, M. Sato, H. Komano, and S. Tagawa, " Proton dynamics in chemically amplified electron beam resists., " Jpn. J. Appl. Phys., Part 1 43, L848 (2004).
20. M. von Smoluchowski, " Versuch einer mathematischen theorie der koagulationskinetik kolloider Lösungen., " Z. Phys. Chem., Stoechiom. Verwandtschaftsl. 92, 129 (1917).
21. M. Yoshizawa, and S. Moriya, " Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method., " J. Vac. Sci. Technol. B B20, 1342 (2002).
22. D. He, and F. Cerrina, " Process dependence of roughness in a positive-tone chemically amplified resist., " J. Vac. Sci. Technol. B B16, 3748 (1998).
23. M. Kotera, K. Yagura, and H. Niu, " Dependence of line width and its edge roughness on electron beam exposure dose., " J. Vac. Sci. Technol. B B23, 2775 (2005).
24. P. Kruit, and S. Steenbrink, " Local critical dimension variation from shot-noise related line edge roughness., " J. Vac. Sci. Technol. B B23, 3033 (2005).
25. G. M. Gallatin, " Resist blur and line edge roughness., " Proc. SPIE 5754, 38-52 (2005).