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Volumn 20, Issue 3, 2007, Pages 437-444

Reduction of the outgassing segments and LWR improvement for the next generation EUV lithography

Author keywords

Chemical amplified resist; EUV lithography; LWR; Outgassing

Indexed keywords

EID: 36148958332 PISSN: 09149244 EISSN: 13496336 Source Type: Journal
DOI: 10.2494/photopolymer.20.437 Document Type: Article

Times cited : (24)

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