First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Gavrikov, Alexey ^a   Knizhnik, Andrey ^a   Safonov, Andrey ^a   Scherbinin, Andrey ^a   Bagatur'Yants, Alexander ^a   Potapkin, Boris ^a   Chatterjee, Aveek ^b   Matocha, Kevin ^c  

^a KINTECH LAB LTD   (Russian Federation)

^b GE GLOBAL RESEARCH   (India)

^c GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL OXYGEN DEMAND; CURING; DEFECT DENSITY; DEFECTS; LEAKAGE (FLUID); MOLECULES; OLIGOMERS; OXIDATION; OXIDATION RESISTANCE; OXYGEN; PASSIVATION; RATE CONSTANTS; SILICA; SILICON; SILICON CARBIDE; SOLID STATE PHYSICS;

A CARBONS; ACTIVATION BARRIERS; ACTIVE SPECIES; CARBON DIMERS; CO MOLECULES; CYANO GROUPS; DEFECT GENERATIONS; DRY OXIDATIONS; FIRST-PRINCIPLES CALCULATIONS; INTERFACE MODELS; INTERFACE TRAPS; KINETIC MECHANISMS; KINETIC MODELING; LIMITING STEPS; NO MOLECULES; OXIDATION PROCESSES; OXYGEN MOLECULES; OXYGEN PENETRATIONS; SILICA LAYERS; SILICA MATRIXES; TRIPLET STATES;

CARBON MONOXIDE;

EID: 56349084738     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3006004     Document Type: Article

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