Enhanced hydrogen bonding strength observed in hydrogenated SiC and Si O2 SiC structures

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Soares, G V ^a   Baumvol, I J R ^a,b   Radtke, C ^a   Stedile, F C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOND STRENGTH (CHEMICAL); DEUTERIUM; ELECTRIC PROPERTIES; HYDROGEN BONDS; OXIDATION; SILICA; SUBSTITUTION REACTIONS;

HYDROGEN BONDING STRENGTH; ISOTOPIC SUBSTITUTION; NUCLEAR REACTION ANALYSIS;

SILICON CARBIDE;

EID: 33847238690     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2645341     Document Type: Article

References (18)

1. J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, IEEE Trans. Electron Devices 49, 658 (2002).
2. R. Singh, Microelectron. Reliab. 46, 713 (2006).
3. V. V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A 162, 321 (1997).
4. J. L. Cantin, H. J. von Bardeleben, Y. Ke, R. P. Devaty, and Choyke, Appl. Phys. Lett. 88, 092108 (2006).
5. S. Wang, M. Di Ventra, S. G. Kim, and S. T. Pantelides, Phys. Rev. Lett. 86, 5946 (2001).
6. S. Dahr, L. C. Feldman, S. Wang, T. Isaacs-Smith, and J. R. Williams, J. Appl. Phys. 98, 014902 (2005).
7. K. Fukuda, S. Suzuki, T. Tanaka, and K. Arai, Appl. Phys. Lett. 76, 1585 (2000).
8. J. Sensaki, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki, and K. Fukuda, IEEE Electron Device Lett. 23, 13 (2002).
9. I. J. R. Baumvol, E. P. Gusev, F. C. Stedile, F. L. Freire, Jr., M. L. Green, and D. Brasen, Appl. Phys. Lett. 72, 450 (1998).
10. S. M. Myers, J. Appl. Phys. 61, 5428 (1987).
11. N. Sieber, B. F. Mantel, Th. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor, and D. Schmeißer, Appl. Phys. Lett. 78, 1216 (2001).
12. N. Sieber, Th. Seyller, L. Ley, D. James, J. D. Ridley, R. C. G. Leckey, and M. Polcik, Phys. Rev. B 67, 205304 (2003).
13. F. Amy and Y. J. Chabal, J. Chem. Phys. 119, 6201 (2003).
14. G. V. Soares, C. Radtke, I. J. R. Baumvol, and F. C. Stedile, Appl. Phys. Lett. 88, 041901 (2006).
15. K. C. Chang, N. T. Nuhfer, L. M. Porter, and Q. Wahab, Appl. Phys. Lett. 77, 2186 (2000).
16. C. I. Harris and V. V. Afanas'ev, Microelectron. Eng. 36, 167 (1997).
17. V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, and M. J. Schulz, Appl. Phys. Lett. 78, 4043 (2001).
18. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller, Appl. Phys. Lett. 76, 1713 (2000).