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Volumn 101, Issue 12, 2007, Pages

A strong reduction in the density of near-interface traps at the SiO 2/4H-SiC interface by sodium enhanced oxidation

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MOS DEVICES; SILICON CARBIDE; SINTERING;

EID: 34547409867     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2745321     Document Type: Article
Times cited : (73)

References (17)
  • 12
    • 34547433636 scopus 로고    scopus 로고
    • Ph.D. thesis, Chalmers University of Technology
    • H. Ö. Ólafsson, Ph.D. thesis, Chalmers University of Technology, 2004.
    • (2004)
    • Ólafsson, H.Ö.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.