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Volumn 101, Issue 12, 2007, Pages
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A strong reduction in the density of near-interface traps at the SiO 2/4H-SiC interface by sodium enhanced oxidation
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON ENERGY LEVELS;
FIELD EFFECT TRANSISTORS;
INTERFACES (MATERIALS);
MOS DEVICES;
SILICON CARBIDE;
SINTERING;
CHANNEL MOBILITIES;
CONDUCTION BAND EDGE;
NEAR-INTERFACE TRAPS;
ELECTRON TRAPS;
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EID: 34547409867
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2745321 Document Type: Article |
Times cited : (73)
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References (17)
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