Thermal growth of SiO 2 on SiC investigated by isotopic tracing and subnanometric depth profiling

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 570-574

  Radtke, C ^a   Baumvol, I J R ^a   Stedile, F C ^a   Vickridge, I C ^b   Trimaille, I ^b   Ganem, J J ^b   Rigo, S ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b SORBONNE UNIVERSITÉ   (France)

Author keywords

Isotopic tracing; Nuclear reaction profiling; Oxidation; SiC

Indexed keywords

DIFFUSION; ETCHING; ISOTOPES; NATURAL GAS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; THERMOOXIDATION;

ISOTOPIC TRACING;

SILICA;

EID: 17644428866     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00403-3     Document Type: Conference Paper

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