Low temperature oxidation of SiC preamorphized by ion implantation

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6119-6123

  Poggi, Antonella ^a   Nipoti, Roberta ^a   Solmi, Sandro ^a   Barozzi, Mario ^b   Vanzetti, Lia ^b  

^a CNR   (Italy)

^b ITC IRST   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION; ELECTRONS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; LOW TEMPERATURE EFFECTS; MOSFET DEVICES; OXIDATION; RESONANCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL PERFORMANCES; PREAMORPHIZATION; THERMAL GROWTH; TRANSITION LAYERS;

SILICON CARBIDE;

EID: 2942694315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1703822     Document Type: Article

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