Oxidation at the Si/SiO2 interface: Influence of the spin degree of freedom

Physical Review Letters

Volumn 90, Issue 1, 2003, Pages

  Orellana, W ^a   Da Silva, Antônio J R ^a   Fazzio, A ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; COMPUTER SIMULATION; DEGREES OF FREEDOM (MECHANICS); GROUND STATE; OXIDATION; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

KOHN-SHAM EQUATIONS; PEROXY LINKAGE DEFECT; SOFTWARE PACKAGE SIESTA; SPIN DEGREE OF FREEDOM;

INTERFACES (MATERIALS);

EID: 0037428581     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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